Aluminum Nitride (AlN) Single Crystal Substrates | Price on Request

Aluminum Nitride (AlN) Single Crystal Substrate

Application:
Ideal for UV-LEDs, high-power/high-frequency electronic devices, and surface acoustic wave (SAW) devices due to its wide bandgap and high thermal conductivity.

Product Overview:
This product features high-quality Aluminum Nitride (AlN) single crystals grown via Physical Vapor Transport (PVT). It provides a native substrate for AlGaN-based deep-ultraviolet (DUV) optoelectronics, significantly reducing dislocation density compared to heteroepitaxy.

Material Properties:
– Material: Aluminum Nitride (AlN)
– Crystal Structure: Wurtzite (2H), a=3.112 Angstrom, c=4.982 Angstrom
– Growth Method: Physical Vapor Transport (PVT)
– Bandgap: 6.28 eV (Direct)
– Thermal Conductivity: 320 W/m·K
– Breakdown Field: 11.7 MV/cm
– Density: 3.23 g/cm^3
– Sound Velocity: 11,300 m/s

Standard Substrate Specifications:
– Orientation: (0001) ± 0.5°
– Thickness: 400 ± 50 μm
– Surface Roughness (Ra): Al-face < 0.5 nm (CMP Polished); N-face < 1.2 μm (Matte)
– Geometric Tolerances: TTV <= 30 μm; Warp <= 30 μm; Bow <= 30 μm – Usable Area: >= 90%
– Surface Contamination: None (Naked eye, scattered light)
– Cracks: None (Naked eye, strong light)

Quality Grade Criteria (By Grade):

1. S-Grade (Super):
– HRXRD FWHM @(0002): <= 150 arcsec
– HRXRD FWHM @(10-12): <= 100 arcsec
– Absorption Coeff. @265nm: <= 50 cm^-1
– Scratches/Chips: None
– Edge Exclusion: 1 mm

2. P-Grade (Production):
– HRXRD FWHM @(0002): <= 300 arcsec
– HRXRD FWHM @(10-12): <= 200 arcsec
– Absorption Coeff. @265nm: <= 70 cm^-1
– Scratches/Chips: None
– Edge Exclusion: 1 mm

3. R-Grade (Research):
– HRXRD FWHM @(0002): <= 500 arcsec
– HRXRD FWHM @(10-12): <= 400 arcsec
– Absorption Coeff. @265nm: <= 100 cm^-1
– Scratches: None
– Chips: <= 3 (Cumulative length <= 1.0mm)
– Edge Exclusion: 1 mm

Customization & Special Requests:
– Custom diameters up to 2 inches are available.
– For any non-standard specifications, please contact us for a quote.