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$175.00
Indium Arsenide (InAs) Single Crystal Substrates, <100> Orientation, 2 pcs/pack Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm^3 Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10^16 cm^-3 – Mobility: >= 2 x 10^4 cm^2/V.s – Dislocation Density:…
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$175.00
Indium Arsenide (InAs) Single Crystal Substrates, <111> Orientation, 2 pcs/pack Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm^3 Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10^16 cm^-3 – Mobility: >= 2 x 10^4 cm^2/V.s – Dislocation Density:…
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$893.00 – $1,198.00Price range: $893.00 through $1,198.00
Indium Arsenide (InAs) Single Crystal Wafers, <100> Orientation Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm^3 Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10^16 cm^-3 – Mobility: >= 2 x 10^4 cm^2/V.s – Dislocation Density: < 3…
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$893.00 – $1,198.00Price range: $893.00 through $1,198.00
Indium Arsenide (InAs) Single Crystal Wafers, <111> Orientation Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=6.058 Angstrom – Melting Point: 942 °C – Density: 5.66 g/cm^3 Standard Specifications (by Type): 1. N-type/undoped – Doping Concentration: <= 3 x 10^16 cm^-3 – Mobility: >= 2 x 10^4 cm^2/V.s – Dislocation Density: < 3…