Showing all 15 results

  • Silicon Carbide (N-type 3C-SiC) Single Crystal Substrates

    Silicon Carbide (N-type 3C-SiC) Single Crystal Substrates

    Price range: $189.00 through $219.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

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  • Silicon Carbide (N-type 3C-SiC) Single Crystal Wafers

    Silicon Carbide (N-type 3C-SiC) Single Crystal Wafers

    $829.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

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  • Silicon Carbide (N-type 4H-SiC) Single Crystal Substrates

    Silicon Carbide (N-type 4H-SiC) Single Crystal Substrates

    Price range: $33.00 through $159.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Silicon Carbide (N-type 4H-SiC) Single Crystal Wafers

    Silicon Carbide (N-type 4H-SiC) Single Crystal Wafers

    Price range: $149.00 through $1,009.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Silicon Carbide (N-type 6H-SiC) Single Crystal Substrates

    Silicon Carbide (N-type 6H-SiC) Single Crystal Substrates

    Price range: $159.00 through $189.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Silicon Carbide (N-type 6H-SiC) Single Crystal Wafers

    Silicon Carbide (N-type 6H-SiC) Single Crystal Wafers

    $479.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

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  • Silicon Carbide (P-type 4H-SiC) Single Crystal Substrates

    Silicon Carbide (P-type 4H-SiC) Single Crystal Substrates

    Price range: $157.00 through $189.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Silicon Carbide (P-type 4H-SiC) Single Crystal Wafers

    Silicon Carbide (P-type 4H-SiC) Single Crystal Wafers

    $699.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

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  • Silicon Carbide (P-type 6H-SiC) Single Crystal Substrates

    Silicon Carbide (P-type 6H-SiC) Single Crystal Substrates

    Price range: $139.00 through $159.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Silicon Carbide (P-type 6H-SiC) Single Crystal Wafers

    Silicon Carbide (P-type 6H-SiC) Single Crystal Wafers

    $389.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

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  • Silicon Carbide (SI 4H-SiC) Single Crystal Substrates

    Silicon Carbide (SI 4H-SiC) Single Crystal Substrates

    Price range: $39.00 through $169.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

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  • Silicon Carbide (SI 4H-SiC) Single Crystal Wafers

    Silicon Carbide (SI 4H-SiC) Single Crystal Wafers

    Price range: $159.00 through $1,179.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Silicon Carbide (SI 6H-SiC) Single Crystal Substrates

    Silicon Carbide (SI 6H-SiC) Single Crystal Substrates

    Price range: $179.00 through $219.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

    Select optionsDone This product has multiple variants. The options may be chosen on the product page
  • Silicon Carbide (SI 6H-SiC) Single Crystal Wafers

    Silicon Carbide (SI 6H-SiC) Single Crystal Wafers

    $619.00

    Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

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  • Silicon Carbide (SiC) Ceramic Substrates

    Silicon Carbide (SiC) Ceramic Substrates

    Price range: $29.00 through $9,999.00

    Silicon Carbide (SiC) Ceramic Plates / SiC Structural Ceramic Components Product Overview Silicon Carbide (SiC) ceramic plates are high-performance structural ceramics designed for extreme temperature and harsh operating environments. Manufactured using pressureless sintering technology, these SiC ceramics offer outstanding thermal conductivity, excellent oxidation resistance, superior thermal shock resistance, and high mechanical strength. They are widely…

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