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$459.00 – $699.00Price range: $459.00 through $699.00
Gallium Nitride (GaN) Single Crystal Substrate Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
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$979.00 – $999.00Price range: $979.00 through $999.00
Gallium Nitride (GaN) Single Crystal Substrate Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
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$62.00 – $131.00Price range: $62.00 through $131.00
GaN film on Sapphire Substrates Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al2O3 Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al2O3 Substrate Thickness: 430 ± 25 um – Al2O3 Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al2O3 Substrate Roughness:…
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$495.00 – $505.00Price range: $495.00 through $505.00
GaN film on Sapphire wafers Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al2O3 Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al2O3 Substrate Thickness: 430 ± 25 um – Al2O3 Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al2O3 Substrate Roughness:…