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  • SiO2 Alignment Cross Mark Wafer (Au Pattern on Si)

    SiO2 Alignment Cross Mark Wafer (Au Pattern on Si)

    $399.00

    SiO2 Alignment Cross Mark Wafer (Au Pattern on Si (100)) These alignment-mark silicon wafers feature photolithographically patterned gold cross markers fabricated on thermal silicon dioxide. The cross patterns provide precise spatial references for microscopy, microfabrication alignment, and microelectrode positioning. The patterned surface enables accurate distance measurement and positioning in micro-scale experiments, making it suitable for…

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  • SiO2 Alignment Mark Wafer (Cr Number Pattern on Si)

    SiO2 Alignment Mark Wafer (Cr Number Pattern on Si)

    Price range: $399.00 through $499.00

    SiO2 Alignment Mark Wafer (Cr Number Pattern on Si (100)) These thermal silicon dioxide wafers feature precision photolithographic chromium number patterns designed for alignment, localization, and microfabrication applications. The patterned surface provides indexed micro-scale positioning, ideal for electrochemical mapping, MEMS device development, lithography training, and microelectrode alignment. Wafer Specifications Diameter: 4 inch Orientation: Si (100)…

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  • Thermal SiO2 on N-Type (As-Doped) Si (100) Wafers

    Thermal SiO2 on N-Type (As-Doped) Si (100) Wafers

    Price range: $49.00 through $219.00

    Thermal SiO2 on N-Type (Arsenic-Doped) Si (100) Wafers Overview Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature thermal oxidation on heavily doped N-type (arsenic-doped) Si (100) substrates with ultra-low resistivity of 0.001–0.005 Ω·cm. The highly doped silicon substrate provides excellent electrical conductivity, while the thermally grown SiO2 layer offers superior film density, high…

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  • Thermal SiO2 on N-Type (Phosphorus-Doped) Si (100) Wafers

    Thermal SiO2 on N-Type (Phosphorus-Doped) Si (100) Wafers

    Price range: $49.00 through $219.00

    Thermal SiO2 on N-Type (Phosphorus-Doped) Si (100) Wafers Overview Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature thermal oxidation on N-type (phosphorus-doped) Si (100) substrates with a resistivity range of 1–10 Ω·cm. Thermally grown oxide provides superior film density, excellent thickness uniformity, low interface trap density, and high dielectric strength compared to deposited…

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  • Thermal SiO2 on P-type (B-Doped) Si (100) Wafers

    Thermal SiO2 on P-type (B-Doped) Si (100) Wafers

    Price range: $49.00 through $219.00

    Thermal SiO2 on P-Type (Boron-Doped) Si (100) Wafers Overview Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature thermal oxidation on P-type (boron-doped) Si (100) substrates. Available resistivity ranges include 1–10 Ω·cm and heavily doped 0.001–0.005 Ω·cm options. Thermally grown SiO2 provides superior film density, excellent dielectric strength, and a stable Si/SiO2 interface compared…

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  • Thermal SiO2 on undoped Si (100) Wafers

    Thermal SiO2 on undoped Si (100) Wafers

    Price range: $49.00 through $209.00

    Thermal SiO2 on Undoped Si (100) Wafers Overview Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature dry/wet thermal oxidation on undoped Si (100) substrates. Thermal oxide provides superior film density, excellent uniformity, low defect density, and outstanding electrical insulation compared to deposited oxide films. These wafers are widely used in semiconductor research, MOS…

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