Germanium (Ge) Single Crystal Substrates
Ge

Germanium (Ge) Single Crystal Substrates

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Germanium (Ge) Single Crystal Substrates

Physical Properties:
– Crystal Structure: Cubic System
– Lattice Constant: 5.6754 Angstrom
– Melting Point: 937.4 °C
– Density: 5.323 g/cm^3
– Growth Method: CZ

Standard Specifications (by Product):

Product 1:
– Type/Doping: N-type/Sb-doped
– Orientation: (111) ± 0.5°
– Resistivity: 5~40 ohm-cm
– Surface Finish: Single-Side Polished
– Dislocation Density: <= 0 cm^-2
– Packaging: Nitrogen filled, single wafer box packaging

Product 2:
– Type/Doping: P-type/Ga-doped
– Orientation: (100) ± 0.5°
– Resistivity: 0.005 ~ 0.02 ohm-cm
– Surface Finish: Single-Side Polished
– Dislocation Density: <= 0 cm^-2
– Packaging: Nitrogen filled, single wafer box packaging

option

10 × 10 × 0.2 mm，，P-type，Single-Side Polished, 10 × 10 × 0.3 mm，，N-type，Double-Side Polished, 10 × 10 × 0.5 mm，，N-type，Double-Side Polished, 10 × 10 × 0.5 mm，，N-type，Single-Side Polished, 10 × 10 × 1 mm，，N-type，Double-Side Polished, 20 × 20 × 0.7 mm，，N-type，Double-Side Polished

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