Silicon Carbide (N-type 4H-SiC) Single Crystal Substrates

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Silicon Carbide (SiC) Single Crystal Substrates (Wafers)

Physical Properties (4H-SiC vs 6H-SiC):
– Lattice Parameters:
– 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom
– 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom
– Stacking Sequence: 4H (ABCB) / 6H (ABCACB)
– Mohs Hardness: ≈ 9.2
– Density: 3.21 g/cm^3
– Thermal Expansion Coefficient: 4-5 x 10^-6/K
– Thermal Conductivity (@298K):
– N-type: a~4.2 W/cm·K, c~3.7 W/cm·K
– Semi-insulating: a~4.9 W/cm·K, c~3.9 W/cm·K
– Band-gap: 3.23 eV (4H) / 3.02 eV (6H)
– Break-Down Electrical Field: 3-5 x 10^6 V/cm

Standard Specifications (4 inch Wafer):

1. Orientation
– 4H-N: Off axis: 4.0° toward <11-20> ±0.5°
– 4H-SI: On axis: <0001> ±0.5°

2. Resistivity
– 4H-N: 0.015 ~ 0.025 ohm-cm
– 4H-SI: ≥ 1E7 ohm-cm

3. Surface Quality
– Roughness (Polish): Ra ≤ 1 nm
– Roughness (CMP): Ra ≤ 0.5 nm
– TTV / Bow / Warp: ≤10μm / ≤25μm / ≤35μm (for Z and P Grade)
– Edge Exclusion: 2 mm

4. Defects Inspection (High Intensity Light)
– Cracks: None (Z/P Grade)
– Hex Plates: Cumulative area ≤ 0.05% (Z Grade)
– Polytype Areas: None (Z/P Grade)
– Scratches: None (Z/P Grade)

option	10 × 10 × 0.35 mm，Double-side Polished, 10 × 10 × 1 mm，Double-side Polished, 15 × 15 × 0.35 mm，Double-side Polished, 20 × 20 × 0.35 mm，Double-side Polished, 25 × 25 × 0.35 mm，Double-side Polished, 3 × 3 × 0.35 mm，Double-side Polished, 5 × 10 × 0.35 mm，Double-side Polished, 5 × 5 × 0.35 mm，Double-side Polished, 5 × 5 × 1 mm，Double-side Polished