Ce:YAG scintillator crystal Wafers | Price on Request

Ce:YAG scintillator crystal Wafers

Physical Properties:
– Crystal Structure: Cubic System
– Lattice Constant: a=12.01 Angstrom
– Doping Concentration: 0.27% at
– Purity: >99.99%
– Density: 4.55 g/cm^3
– Mohs Hardness: 8.5 (Mohs)
– Melting Point: 1950 °C
– Refractive Index: 1.82
– Emission Wavelength: 550 nm
– Thermal Expansion Coefficient: (0.8~0.9) x 10^-6/°C , 0 ~ 250°C
– Growth Method: Czochralski (CZ)

Standard Specifications:
– Orientation: (111) miscut < 0.3°, (110) miscut < 0.3°, (100) miscut < 0.3°
– Edge orientation: Available
– Dimensions: 5 x 5 x 0.5 mm, 10 x 10 x 0.5 mm, dia 2 inch x 0.5 mm
– Surface Finish: Single-Side Polished / Double-Side Polished
– Surface Roughness: Ra: < 0.5 nm