Copper (Cu) Single Crystal Substrates

Copper (Cu) Single Crystal Substrates

Physical Properties:
– Crystal Structure: Cubic System
– Lattice Constant: a=3.605Angstrom
– Density: 8.93 g/cm^3
– Melting Point: 1083 °C
– Boiling Point: 2567 °C
– Mohs Hardness: 3 (Mohs)
– Purity: 99.999%
– Growth Method: Czochralski or Bridgman Method

Standard Specifications:
– Orientation: (100) miscut <= 2.0°, (110) miscut <= 2.0°, (111) miscut <= 2.0°
– Edge Orientation: Available
– Dimensions: 10 x 10 x 1.0mm (Customizable other sizes)
– Surface Finish: Single-Side Polished / Double-Side Polished
– Surface Roughness: Ra: < 100Angstrom