Aluminum Scandium Nitride (AlScN) Film on Sapphire Wafer Template

Aluminum Scandium Nitride (AlScN) Film on Sapphire Wafer Template

Application:
Designed as the premier core substrate material for next-generation 5G RF SAW/BAW filters and MEMS sensors. The C-axis sound velocity of AlN thin films can reach 12,000 m/s (compared to <4,000 m/s for traditional substrates), making it ideal for high-frequency applications. Product Overview: This product features a Scandium-doped Aluminum Nitride (AlScN) thin film grown on a C-plane Sapphire substrate. Doping with Scandium significantly enhances the piezoelectric coefficient of the AlN film, thereby improving the electromechanical coupling coefficient of SAW/BAW devices. It combines high chemical and thermal stability with compatibility with standard Silicon-based CMOS technology. Key Specifications: – Substrate Material: Sapphire (Al2O3), C-plane – Film Material: Aluminum Scandium Nitride (AlScN) – Sc Concentration: 40 ± 5 at% – Standard AlScN Thickness: 800 nm (Customizable) – Crystal Orientation: C-axis (0001) ± 0.2° – Effective Area: > 95%
– Cracks: None

Crystal Quality & Surface:
– HRXRD FWHM @ (0002): <= 120 arcsec
– Surface Roughness (Ra, 5×5μm): <= 10 nm

Geometric Parameters (By Diameter):

1. 2 inch Wafer:
– Substrate Thickness: 430 ± 15 μm
– Total Thickness Variation (TTV): <= 10 μm
– Warp: <= 20 μm
– Bow: <= 20 μm

2. 4 inch Wafer:
– Substrate Thickness: 650 ± 20 μm
– Total Thickness Variation (TTV): <= 20 μm
– Warp: <= 40 μm
– Bow: <= 40 μm

3. 6 inch Wafer:
– Substrate Thickness: 1300 ± 20 μm
– Total Thickness Variation (TTV): <= 20 μm
– Warp: <= 60 μm
– Bow: <= 60 μm

Customization & Special Requests:
– Custom Sc concentrations and film thicknesses are available.
– Please contact us for specific requirements not listed above.