Gold-Coated Silicon Wafers (Au/Ti or Au/Cr on Si)
Au-Coated Si

Gold-Coated Silicon Wafers (Au/Ti or Au/Cr on Si)

Price range: $189.00 through $729.00

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Gold-Coated Silicon Wafers (Au/Ti or Au/Cr on Si) – 2″–8″
Overview
The 4″ Si (100) | 100 nm Au configuration is the most commonly used specification for laboratory and microfabrication applications.
Our gold-coated silicon wafers are fabricated using high-vacuum magnetron sputtering or thermal evaporation to ensure uniform thickness, strong adhesion, and clean surface morphology suitable for research and device fabrication.
A controlled adhesion layer (Ti or Cr) is deposited between the silicon substrate and the gold layer to enhance film stability and long-term reliability.
This product is ideal for electrochemical research, microfabrication, MEMS development, RF structures, and sensor platforms.

Layer Structure
Standard structure:
Au (Gold layer)
Ti or Cr adhesion layer
Silicon wafer (100)

Adhesion Layer Options
We offer the following standard options:
Ti (10 nm) – Recommended
Most widely used in research and microfabrication. Excellent compatibility with Si/SiO2 and stable for electrochemical applications.
Ti (20 nm)
Enhanced adhesion for thicker gold layers (>200 nm) or demanding environments.
Cr (10 nm)
Alternative adhesion layer commonly used in MEMS and lithography processes.
Custom adhesion thickness within 10–30 nm available upon request.

Gold Thickness Options
Standard Au thickness:
50 nm
100 nm
200 nm
300 nm
500 nm
1 um
Custom thickness available upon request.

Wafer Specifications
Standard configuration (default)
Diameter: 2″, 4″, 6″, 8″
Orientation: Si (100)
Doping: N-type, 1–10 Ω·cm resistivity (phosphorus-doped)
Surface finish: Single-side polished (SSP)
This configuration is widely used in research laboratories, electrochemistry, and microfabrication.

Custom options available upon request
Doping: N-type or P-type
Surface finish: Single-side polished (SSP) or Double-side polished (DSP)
Custom resistivity range

Please contact us for special requirements or bulk orders.

Deposition Process
High-vacuum magnetron sputtering
Thermal evaporation (depending on thickness requirement)
Controlled deposition ensures good uniformity and strong adhesion across the wafer surface.

Applications
Microelectrode fabrication
Electrochemical studies (HER, OER, CO2RR)
MEMS device development
RF and microwave structures
Bonding pads
Sensor and biosensor platforms
Micro-patterned gold devices

Quality & Packaging
Uniform film thickness control
Clean-room compatible handling
Protective packaging to prevent contamination
Custom specifications supported

Why Choose Our Au on Si Wafers?
Research-grade quality
Customizable thickness options
Competitive direct-manufacturer pricing
Custom Orders
We support:
Custom wafer diameter
Custom gold thickness
Custom adhesion layer thickness
Patterned gold upon request
Contact us for technical consultation and academic pricing.

option

12″ Si | 100 nm Au, 2″ Si | 1 um Au, 2″ Si | 100 nm Au, 2″ Si | 200 nm Au, 2″ Si | 50 nm Au, 2″ Si | 500 nm Au, 4″ Si | 100 nm Au, 4″ Si | 200 nm Au, 4″ Si | 300 nm Au, 4″ Si | 50 nm Au, 4″ Si | 500 nm Au, 6″ Si | 100 nm Au, 6″ Si | 200 nm Au, 6″ Si | 300 nm Au, 6″ Si | 50 nm Au, 6″ Si | 500 nm Au, 8″ Si | 100 nm Au, 8″ Si | 150 nm Au, 8″ Si | 200 nm Au, 8″ Si | 300 nm Au
option1

Adhesion Layer: Cr (10 nm), Adhesion Layer: Ti (10 nm) – Recommended, Adhesion Layer: Ti (20 nm)

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