Aluminum-Coated Silicon Wafers (Al/Ti on Si (100))

Aluminum-Coated Silicon Wafers (Al/Ti on Si (100))

Overview
Our aluminum-coated silicon wafers are fabricated using high-vacuum magnetron sputtering to ensure uniform thickness, good adhesion, and clean surface morphology suitable for semiconductor research and device fabrication.

A titanium (Ti) adhesion layer is deposited between the silicon substrate and the aluminum film to enhance film stability and interfacial bonding.

Aluminum thin films are widely used in microelectronics, reflective coatings, interconnect research, MEMS devices, and electrode development.

Layer Structure
Al (Aluminum layer)
Ti (10 nm adhesion layer)
Si (100) substrate

Recommended Aluminum Thickness
100 nm – * Recommended for general conductive layer applications
200 nm – * Recommended for device fabrication
500 nm – Thick conductive layer
1 um – High-current or bonding applications

Substrate Specifications
Orientation: Si (100)
Doping: N-type, 1–10 Ω·cm resistivity
Surface finish: Single-side polished (SSP)

Optional:
P-type silicon
Double-side polished (DSP)
Custom resistivity range

Deposition Process
High-vacuum magnetron sputtering
Controlled film thickness uniformity
Clean-room compatible handling

Applications
Semiconductor interconnect research
MEMS device fabrication
Reflective coatings
Bonding pads
Microelectrode structures
Thin film device prototyping

Quality & Packaging
Uniform film thickness control
Research-grade surface quality
Protective packaging to minimize surface oxidation exposure

Custom wafer sizes and thicknesses available upon request.