Aluminum Oxide (Al2O3) Thin Film on Si (100) Substrates (10 × 10 mm)

Aluminum Oxide (Al2O3) Thin Film on Si (100) Substrates – 10 × 10 mm

Overview
Our aluminum oxide (Al2O3) thin film substrates are precision-cut from research-grade Al2O3-coated Si (100) wafers. These substrates provide high-quality dielectric and surface passivation layers suitable for semiconductor research, interface engineering, and thin film device development.

Al2O3 thin films offer excellent electrical insulation, chemical stability, and reliable surface protection. The compact 10 × 10 mm format is ideal for laboratory-scale experiments, surface analysis, and device prototyping.

Layer Structure
Al2O3 (Aluminum Oxide layer)
Si (100) substrate

Available Film Thickness
20 nm – * Most popular for interface engineering and passivation
50 nm – * General dielectric and insulation applications

Substrate Specifications
Size: 10 × 10 mm
Thickness: 0.5 mm
Crystal Orientation: Si (100)
Type: N-type
Resistivity: 1–10 Ω·cm
Surface Finish: Single-side polished
Configuration: Single-side Al2O3 coating

Film Characteristics
Uniform thickness control
Stable dielectric performance
High chemical resistance
Research-grade surface quality

Applications
Surface passivation studies
MOS capacitor structures
Interface engineering research
Thin film deposition platforms
Catalyst support substrates
Protective dielectric layer experiments

Quality & Packaging
Clean-room compatible handling
Individually packaged to prevent contamination
Research-grade substrate quality

Custom thickness and sizes available upon request.