Gallium Arsenide (GaAs) Single Crystal Substrates

Gallium Arsenide (GaAs) Single Crystal Substrate – N-type / P-type / Semi-Insulating

Physical Properties:
– Crystal Structure: Cubic System
– Lattice Constant: a=5.6534 Angstrom
– Melting Point: 1237 °C

Standard Specifications (by Type):

Type 1: N-type / Si-doped
– Growth Method: VGF
– Orientation: (100) off (111) 15°±0.5°
– Primary Flat: (0-1-1) ± 0.5° / 16 ± 2 mm
– Secondary Flat: (0-11) ± 0.5° / 7 ± 1 mm
– Dimensions: 10 x 10 x 0.35 mm
– Surface Finish: Single-Side Polished
– Resistivity: (0.4~9) x 10^-3 ohm-cm
– Carrier Concentration: (5~40) x 10^17 cm^-3
– Dislocation Density (EPD): <= 5000 cm^-2 – Mobility: > 1500 cm^2/V.s
– Total Thickness Variation (TTV): < 15 um
– Bow: < 10 um
– Warp: < 10 um

Type 2: P-type / Zn-doped
– Growth Method: VGF
– Conduct Type: S-C-P
– Dopant: GaAs-Zn
– Diameter: 50.8 ± 0.4 mm
– Orientation: (100) ± 0.50°
– OF Location/Length: EJ[ 0 -1 -1] ± 0.50 / 16 ± 1 mm
– IF Location/Length: EJ[ 0 -1 1 ] ± 0.50 / 7 ± 1 mm
– Resistivity: (5~7) x 10^-3 ohm-cm
– Dislocation Density (EPD): Max 5000 / cm2
– Thickness: 350 ± 25 um
– Surface Finish: Double-Side Polished
– TTV / TIR: Max 10 um
– Bow: Max 10 um
– Warp: Max 10 um
– Particle Count: < 50 (size > 0.3um)
– Epi-Ready: Yes

Type 3: Semi-Insulating
– Growth Method: VGF
– Orientation: (100) ± 0.5°
– Primary Flat: (00-1) ± 0.5° / 32 ± 2 mm
– Secondary Flat: (0-11) ± 0.5° / 18 ± 1 mm
– Dimensions: 10 x 10 x 0.6 mm
– Surface Finish: Double-Side Polished
– Resistivity: > 1 x 10^7 ohm-cm
– Dislocation Density (EPD): < 6000 cm^-2 – Mobility: > 5000 cm^2/V.s
– Total Thickness Variation (TTV): < 15 um
– Bow: < 10 um
– Warp: < 10 um