Indium Phosphide (InP) Single Crystal Wafers
InP

Indium Phosphide (InP) Single Crystal Wafers

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Indium Phosphide (InP) Single Crystal Wafers, <100>

Physical Properties:
– Crystal Structure: Cubic System
– Lattice Constant: a=5.4505 Angstrom
– Density: 4.81 g/cm^3
– Melting Point: 1062 °C
– Mohs Hardness: 3 (Mohs)
– Growth Method: LEC

Standard Specifications (by Type):

1. N-type/undoped
– Doping Concentration (n): < 3 x 10^16 cm^-3 – Mobility: > 1700 cm^2/V.s
– Dislocation Density (EPD): < 50000 cm^-2

2. N-type/S-doped
– Doping Concentration (n): 5 x 10^17 < n > 5 x 10^18 cm^-3
– Mobility: > 1700 cm^2/V.s
– Dislocation Density (EPD): < 50000 cm^-2

3. P-type/Zn-doped
– Doping Concentration (n): 0.6 x 10^18 < n < 6 x 10^18 cm^-3 – Mobility: > 50 cm^2/V.s
– Dislocation Density (EPD): < 50000 cm^-2 4. N-type/Fe-doped – Doping Concentration (n): 10^7 ~ 10^8 cm^-3 – Mobility: > 1700 cm^2/V.s
– Resistivity: > 10^7 ohm.cm
– Dislocation Density (EPD): < 50000 cm^-2

option

2″ dia × 0.5 mm，N-type (Fe-doped)，Double-Side Polished, 2″ dia × 0.5 mm，N-type (S-doped)，Single-Side Polished, 2″ dia × 0.5 mm，N-type (un-doped)，Single-Side Polished, 2″ dia × 0.5 mm，P-type (Zn-doped)，Double-Side Polished, 3″ dia × 0.6 mm，N-type (Fe-doped)，Double-Side Polished, 3″ dia × 0.6 mm，N-type (S-doped)，Single-Side Polished, 3″ dia × 0.6 mm，N-type (un-doped)，Single-Side Polished, 3″ dia × 0.6 mm，P-type (Zn-doped)，Double-Side Polished, 4″ dia × 0.65 mm，N-type (Fe-doped)，Double-Side Polished, 4″ dia × 0.65 mm，N-type (S-doped)，Single-Side Polished, 4″ dia × 0.65 mm，N-type (un-doped)，Single-Side Polished, 4″ dia × 0.65 mm，P-type (Zn-doped)，Double-Side Polished

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