SiO2 Single Crystal Wafers
SiO2

SiO2 Single Crystal Wafers

Price range: $47.00 through $166.00

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SiO2 Single Crystal Wafer

Physical Properties:
– Crystal Structure: Hexagonal System
– Lattice Parameters: a=4.914 Angstrom, c=5.405 Angstrom
– Density: 2.533 g/cm^3
– Melting Point: 1700 °C (Phase transition temp 573.1°C)
– Hardness: 7 (Mohs)
– Growth Method: Hydrothermal

Standard Specifications:

1. Orientation / Cut
– Z-cut (001), X-cut (110), Y-cut (100): miscut < 0.3°
– ST-cut, AT-cut: Available

2. Edge Orientation
– Available

3. Surface Quality
– Surface Roughness: Ra < 0.5 nm (CMP)
– Polish: Single-side polished / Double-side polished

option

1″ dia × 0.5 mm，X-cut (110)，Double-Side Polished, 1″ dia × 0.5 mm，X-cut (110)，Single-Side Polished, 1″ dia × 0.5 mm，Y-cut (100)，Double-Side Polished, 1″ dia × 0.5 mm，Y-cut (100)，Single-Side Polished, 1″ dia × 0.5 mm，Z-cut (001)，Double-Side Polished, 1″ dia × 0.5 mm，Z-cut (001)，Single-Side Polished, 2″ dia × 0.5 mm，X-cut (110)，Double-Side Polished, 2″ dia × 0.5 mm，X-cut (110)，Single-Side Polished, 2″ dia × 0.5 mm，Y-cut (100)，Double-Side Polished, 2″ dia × 0.5 mm，Y-cut (100)，Single-Side Polished, 2″ dia × 0.5 mm，Z-cut (001)，Double-Side Polished, 2″ dia × 0.5 mm，Z-cut (001)，Single-Side Polished, 3″ dia × 0.5 mm，X-cut (110)，Double-Side Polished, 3″ dia × 0.5 mm，X-cut (110)，Single-Side Polished, 3″ dia × 0.5 mm，Y-cut (100)，Double-Side Polished, 3″ dia × 0.5 mm，Y-cut (100)，Single-Side Polished, 3″ dia × 0.5 mm，Z-cut (001)，Double-Side Polished, 3″ dia × 0.5 mm，Z-cut (001)，Single-Side Polished, 4″ dia × 0.5 mm，X-cut (110)，Double-Side Polished, 4″ dia × 0.5 mm，X-cut (110)，Single-Side Polished, 4″ dia × 0.5 mm，Y-cut (100)，Double-Side Polished, 4″ dia × 0.5 mm，Y-cut (100)，Single-Side Polished, 4″ dia × 0.5 mm，Z-cut (001)，Double-Side Polished, 4″ dia × 0.5 mm，Z-cut (001)，Single-Side Polished

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