LPCVD Si3N4 on Si (100) Substrates
Si3N4/Si

LPCVD Si3N4 on Si (100) Substrates

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LPCVD Si3N4 on Silicon Substrates (Si (100))

Overview
Our LPCVD silicon nitride (Si3N4) substrates are precision-cut from research-grade Si (100) wafers coated with high-density LPCVD silicon nitride films.

LPCVD Si3N4 provides excellent film uniformity, high dielectric strength, good mechanical stability, and low defect density, making these substrates suitable for MEMS research, dielectric studies, and microfabrication experiments.

Layer Structure
Si3N4 (Silicon Nitride layer)
Si (100) substrate

Recommended Film Thickness
200 nm – Standard dielectric / masking layer
300 nm – Recommended for general microfabrication
500 nm – Thick nitride layer for mechanical structures

Available Sizes
5 × 5 mm
10 × 10 mm
15 × 15 mm

Substrate Specifications
Crystal Orientation: Si (100)
Type: N-type
Resistivity: 1–10 Ω·cm
Surface Finish: Single-side polished (SSP)
Configuration: Single-side Si3N4 (standard)

Deposition Process
Low-Pressure Chemical Vapor Deposition (LPCVD)
High film density
Good mechanical stability
Excellent thickness uniformity

Applications
MEMS device prototyping
Hard masking layers
Dielectric isolation research
Mechanical membrane structures
Photonic device platforms

Quality & Packaging
Research-grade wafer quality
Clean-room compatible handling
Carefully packaged to prevent contamination

Custom thickness and sizes available upon request.

option

10 × 10 mm Si | 200 nm LPCVD Si3N4, 10 × 10 mm Si | 300 nm LPCVD Si3N4, 10 × 10 mm Si | 500 nm LPCVD Si3N4, 15 × 15 mm Si | 200 nm LPCVD Si3N4, 15 × 15 mm Si | 300 nm LPCVD Si3N4, 5 × 5 mm Si | 200 nm LPCVD Si3N4, 5 × 5 mm Si | 300 nm LPCVD Si3N4

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