Titanium (Ti) Sputtering Target, 99.995% (4N5) Purity, Circular

Titanium (Ti) Sputtering Target, 99.995% (4N5) Purity, Circular

ZHC LAB’s Titanium (Ti) sputtering target is a high-purity high-purity metallic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable material identity are important.

Key Features

High-Purity Source Material
Supplied at 99.995% (4N5) purity for thin-film workflows that require controlled source composition and dependable deposition behavior.

Circular Target Formats
Available in circular diameters including 1 inch diameter (25.4 mm), 1.97 inch diameter (50 mm), 2 inch diameter (50.8 mm), 2.36 inch diameter (60 mm), 3 inch diameter (76.2 mm), 3.15 inch diameter (80 mm), 4 inch diameter (101.6 mm), 3.94 inch diameter (100 mm). Thickness options include 3 mm thick, 4 mm thick, 5 mm thick, 6 mm thick, 6.35 mm thick, depending on the selected diameter and target configuration.

Controlled Processing and Inspection
Target preparation may include material selection, forming, heat treatment, precision machining, dimensional inspection, surface finishing, cleaning, and final quality review. Composition and impurity control may be supported by analytical methods such as ICP, GDMS, carbon/sulfur analysis, oxygen/nitrogen analysis, and metallographic inspection where appropriate.

Clean Handling and Packaging
Targets are prepared for deposition use with clean surface handling and protective packaging. Store sealed in a dry environment, handle with clean gloves, and avoid direct contact with oil, dust, moisture, or other surface contamination before installation.

Material Properties and Technical Indicators

The following material-property values are provided as reference technical indicators for material selection, source loading, process planning, and thin-film deposition evaluation:

– Element symbol: Ti
– CAS number: 7440-32-6
– Density: 4.506 g·cm^)3
– Physical state: solid
– Melting point: 166 °C
– Boiling point: 3287 °C
– Heat of fusion: 1 4.15 kJ·mol^)1
– Heat of vaporization: 425 kJ·mol^)1
– Specific heat capacity: 25.060 J·mol^)1·K^)1
– Crystal structure: hexagonal close-packed
– Thermal expansion coefficient: (25 °C)8.6 m·m^)1·K^)1
– Thermal conductivity: 21.9W·m^)1·K^)1
– Electrical resistivity: (20 °C)0.420 nΩ·m
– Young’s modulus: 116 GPa
– Shear modulus: 44 GPa
– Poisson’s ratio: 0.32
– Mohs hardness: 6.0
– Brinell hardness: 716 Mpa

Common Applications

– adhesion and barrier layer deposition; titanium nitride process development; semiconductor and MEMS fabrication; wear-resistant and functional coatings
– Academic, industrial, and pilot-scale thin-film process development