Tin (Sn) Wire, 99.99% Purity (Request Current Price)
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Tin (Sn) Wire, 99.99% Purity (Request Current Price)
ZHC LAB Tin (Sn) wire is a high-purity thin-film and materials-research source format supplied for PVD source loading, evaporation-related workflows, filament or wire studies, alloy preparation, and laboratory materials development. The wire and rod formats support precise cutting, weighing, fixture loading, and small-batch experimental work where material identity, purity, and clean handling are important. Pricing requires a current quote because high-purity wire and rod costs vary with purity, diameter, package size, and material market conditions.
Key Features
High-Purity Source Material
Available purity options include 99.99% (4N) for research workflows that require controlled source composition.
Wire and Rod Form Factor
Available diameter and rod-size options include 0.0394 in dia (1 mm) wire, 0.0787 in dia (2 mm) wire, 0.118 in dia (3 mm) wire. Package options include 1 kg, 100 g depending on selected purity and size.
Clean Handling and Storage
Store sealed in a dry environment. Handle with clean gloves or tweezers and avoid contact with oils, dust, moisture, or other contaminants before use.
Technical Specifications
Material: Tin (Sn)
Form: Wire
Purity Options: 99.99% (4N)
Available Size Options: 0.0394 in dia (1 mm) wire, 0.0787 in dia (2 mm) wire, 0.118 in dia (3 mm) wire
Package Options: 1 kg, 100 g
Category: Wires & Filaments
Typical Use: PVD source loading, wire evaporation research, filament-related studies, alloy preparation, and laboratory materials science
Material Properties and Technical Indicators
The following material-property values are provided as reference technical indicators for material selection, source loading, process planning, and thin-film deposition evaluation:
– Element symbol: Sn
– CAS number: 7440-31-5
– Physical state: solid
– Melting point: 231.93 °C
– Boiling point: 2602 °C
– Thermal expansion coefficient: (25 °C)22.0 m·m-1·K-1
– Thermal conductivity: 66.8 W·m-1·K-1
– Electrical resistivity: (0 °C)115 nΩ·m
– Young’s modulus: 50 GPa
– Shear modulus: 18 GPa
– Bulk modulus: 58 GPa
– Mohs hardness: 1.5
– Poisson’s ratio: 0.36
– Brinell hardness: 350MPa
Quality-Control and Handling Indicators
Additional technical indicators reflected from the source product page:
– Analytical checks: ICP-MS trace-element analysis; ICP impurity/composition analysis; GDMS trace-metal analysis; carbon/sulfur impurity analysis; nitrogen/oxygen impurity analysis.
– Inspection focus: metallographic inspection; non-destructive inspection; surface cleanliness measurement; micrometer dimensional inspection; precision caliper dimensional inspection; appearance inspection; dimensional verification.
– Handling and storage: sealed dry storage and protective packaging; clean-glove handling to avoid oil, dust, moisture, and surface contamination; careful handling to prevent compression, impact, or chipping.
– Deposition-use context: magnetron sputtering systems; ion sputtering systems; micro/nano fabrication research; semiconductor thin-film development; photovoltaic materials research; flat-panel display coating research.
Common Applications
– tin wire source loading
– low-melting-point metal film research
– solder, alloy, and precursor material studies
– laboratory materials development
– Academic, industrial, and pilot-scale materials research
| option | 99.99% (4N) |
|---|---|
| option1 | 0.0394 in dia (1 mm) wire, 0.0787 in dia (2 mm) wire, 0.118 in dia (3 mm) wire |
| option2 | 1 kg, 100 g |










