Boron (B) Sputtering Target, 99.9% Purity, Circular

Boron (B) Sputtering Target, 99.9% Purity, Circular

ZHC LAB’s Boron (B) sputtering target is a 99.9% purity high-purity nonmetal PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable material identity are important.

Key Features

Research-Grade Source Material
Supplied as 99.9% Purity for thin-film workflows that require controlled source composition and dependable deposition behavior.

Circular Target Formats
Available in circular diameters including 1 inch diameter (25.4 mm), 1.97 inch diameter (50 mm), 2 inch diameter (50.8 mm), 2.36 inch diameter (60 mm), 3 inch diameter (76.2 mm), 3.15 inch diameter (80 mm), 4 inch diameter (101.6 mm), 3.94 inch diameter (100 mm). Thickness and mounting options include 3 mm thick, 4 mm thick, 5 mm thick, depending on selected configuration.

Controlled Processing and Inspection
Target preparation may include material selection, forming, heat treatment, precision machining, dimensional inspection, surface finishing, cleaning, and final quality review. Composition and impurity control may be supported by analytical methods such as ICP, GDMS, carbon/sulfur analysis, oxygen/nitrogen analysis, and metallographic inspection where appropriate.

Clean Handling and Packaging
Targets are prepared for deposition use with clean surface handling and protective packaging. Store sealed in a dry environment, handle with clean gloves, and avoid direct contact with oil, dust, moisture, or other surface contamination before installation.

Material Properties and Technical Indicators

The following material-property values are provided as reference technical indicators for material selection, source loading, process planning, and thin-film deposition evaluation:

– Element symbol: B
– CAS number: 7740-42-8
– Density: 2.08 g·cm-3
– Physical state: solid
– Melting point: 2076 °C
– Boiling point: 3927 °C
– Heat of fusion: 50.2 kJ·mol-1
– Heat of vaporization: 480 kJ·mol-1
– Specific heat capacity: 11.087 J·mol-1·K-1
– Magnetic order: diamagnetic
– Speed of sound, thin rod: (20 °C)16,200 m/s
– Thermal conductivity: 27.4 W·m-1·K-1
– Electrical resistivity: (20 °C)~106 Ω·m
– Mohs hardness: 9.5

Common Applications

– boron thin-film deposition; boride and dopant source research; hard coating and barrier film studies; advanced PVD process development
– Academic, industrial, and pilot-scale thin-film process development