Boron Nitride (BN) Sputtering Target, 99.9% Purity, Circular

Boron Nitride (BN) Sputtering Target, 99.9% Purity, Circular

ZHC LAB’s Boron Nitride (BN) sputtering target is a 99.9% purity nitride ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable material identity are important.

Key Features

Research-Grade Source Material
Supplied as 99.9% Purity for thin-film workflows that require controlled source composition and dependable deposition behavior.

Circular Target Formats
Available in circular diameters including 1.97 inch diameter (50 mm), 2 inch diameter (50.8 mm), 2.36 inch diameter (60 mm), 3 inch diameter (76.2 mm), 3.15 inch diameter (80 mm), 4 inch diameter (101.6 mm), 3.94 inch diameter (100 mm). Thickness and mounting options include 3 mm thick, 3 mm + 2 mm Cu backing, 3 mm + 3 mm Cu backing, 3 mm + 1 mm Cu backing, 3 mm + 2 mm Cu backing + magnetic shim, 3 mm + 3 mm Cu backing + magnetic shim, depending on selected configuration.

Controlled Processing and Inspection
Target preparation may include material selection, forming, heat treatment, precision machining, dimensional inspection, surface finishing, cleaning, and final quality review. Composition and impurity control may be supported by analytical methods such as ICP, GDMS, carbon/sulfur analysis, oxygen/nitrogen analysis, and metallographic inspection where appropriate.

Clean Handling and Packaging
Targets are prepared for deposition use with clean surface handling and protective packaging. Store sealed in a dry environment, handle with clean gloves, and avoid direct contact with oil, dust, moisture, or other surface contamination before installation.

Mounting Configuration Note
Selected configurations for this product include mounting options such as 3 mm + 1 mm Cu backing; 3 mm + 2 mm Cu backing; 3 mm + 2 mm Cu backing + magnetic shim; 3 mm + 3 mm Cu backing; 3 mm + 3 mm Cu backing + magnetic shim. Choose the plain target, Cu-backed target, and/or magnetic-shim configuration according to the sputtering source geometry and cathode requirements.

Technical Specifications

Material: Boron Nitride (BN)
Purity / Composition: 99.9% Purity
Form: Circular sputtering target
Available Diameters: 1.97 inch diameter (50 mm), 2 inch diameter (50.8 mm), 2.36 inch diameter (60 mm), 3 inch diameter (76.2 mm), 3.15 inch diameter (80 mm), 4 inch diameter (101.6 mm), 3.94 inch diameter (100 mm)
Available Thickness / Backing Options: 3 mm thick, 3 mm + 2 mm Cu backing, 3 mm + 3 mm Cu backing, 3 mm + 1 mm Cu backing, 3 mm + 2 mm Cu backing + magnetic shim, 3 mm + 3 mm Cu backing + magnetic shim
Compatible Equipment: Single-target sputtering systems, multi-target sputtering systems, ion sputtering systems, and magnetron sputtering equipment
Packaging: Protective target packaging for laboratory shipment and storage

Common Applications

– boron nitride thin-film deposition; dielectric and protective coating research; high-temperature ceramic film studies; nitride PVD process development
– Academic, industrial, and pilot-scale thin-film process development