GaN film on Sapphire Wafers

GaN film on Sapphire wafers

Standard Specifications:
– GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1°
– Al2O3 Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1°
– Al2O3 Substrate Thickness: 430 ± 25 um
– Al2O3 Substrate Surface Finish: Single-Side Polished / Double-Side Polished
– Al2O3 Substrate Roughness: Ra: < 0.5 nm

Specifications by Type:

Type 1: N-type/undoped
– GaN film Resistivity: < 0.1 ohm-cm
– Carrier Concentration: < 5 x 10^17 cm^-3
– Mobility: ~ 300 cm^2/V.s
– Xrd FWHMs: (0002) < 300 arcsec, (10-12) < 400 arcsec
– GaN film Thickness: 4.5 ± 0.5 um
– GaN film Structure: ~4.5um UGaN / ~25 nm UGaN buffer / 430±25um Al2O3

Type 2: N-type/Si-doped
– GaN film Resistivity: < 0.05 ohm-cm – Carrier Concentration: > 1 x 10^18 cm^-3
– Mobility: ~ 200 cm^2/V.s
– Xrd FWHMs: (0002) < 300 arcsec, (10-12) < 400 arcsec – GaN film Thickness: 4.5 ± 0.5 um – GaN film Structure: ~2 um NGaN / ~2.5um UGaN / ~25 nm UGaN buffer / 430±25um Al2O3 Type 3: P-type/Mg-doped – GaN film Resistivity: ~ 10 ohm-cm – Carrier Concentration: > 6 x 10^16 cm^-3
– Mobility: ~ 10 cm^2/V.s
– Xrd FWHMs: (0002) < 300 arcsec, (10-12) < 400 arcsec
– GaN film Thickness: 4.5 ± 0.5 um
– GaN film Structure: ~0.5um P+GaN / ~1.5um P-GaN / ~2.5um UGaN / ~25nm UGaN buffer / 430±25um Al2O3