Sapphire (Al2O3) Wafers, C-plane (0001), 1″ < Dia. ≤ 12"

Sapphire (Al2O3) C-Plane Wafers, Large Diameter (1″–12″)

Overview: High-purity single-crystal sapphire (Al2O3) wafers, C-plane (0001) orientation, in standard and large wafer diameters from 1 inch up to 12 inches. Available in single-side polished (SSP) and double-side polished (DSP) options. These epi-ready substrates are widely used in research and semiconductor fabrication.

Key Specifications:
– Orientation: C-plane (0001)
– Standard Diameters: 1″ (25.4 mm), 2″ (50.8 mm), 3″ (76.2 mm), 4″ (100 mm), 6″ (150 mm), 8″ (200 mm), 12″ (300 mm)
– Thickness: 0.4 mm – 1.0 mm (varies by diameter)
– Polish: SSP (single-side polished) or DSP (double-side polished)
– Purity: 99.999%+ single-crystal Al2O3
– Crystal Grade: Optical/research grade
– Surface Roughness: <0.5 nm Ra (polished face)

Material Properties:
– Hardness: 9 Mohs
– Melting Point: 2,040°C
– Optical Transmission: 0.15 – 5.5 μm (UV to mid-IR)
– Thermal Conductivity: ~46 W/(m·K) at RT
– Dielectric Constant: ~9.3 – 11.5

Applications:
– Substrate for GaN, AlN, and III-nitride LED/laser epitaxy
– Power device substrate (GaN-on-sapphire for power electronics)
– Thin-film oxide research (ZnO, NiO, NiAl2O4)
– Optical window substrate for high-power laser systems
– MEMS device fabrication
– Semiconductor research and wafer-scale processing

Notes:
– Contact us for specific diameter, thickness, and polish combinations
– Epi-ready surface quality available on request
– For small diameters (Dia. 3 mm – 1″), see Al2O3-1-1
– Pricing listed is for base (smallest) size; larger wafers priced separately