Thermal SiO2 on N-Type (As-Doped) Si (100) Wafers

Thermal SiO2 on N-Type (Arsenic-Doped) Si (100) Wafers

Overview
Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature thermal oxidation on heavily doped N-type (arsenic-doped) Si (100) substrates with ultra-low resistivity of 0.001–0.005 Ω·cm.

The highly doped silicon substrate provides excellent electrical conductivity, while the thermally grown SiO2 layer offers superior film density, high dielectric strength, and a stable Si/SiO2 interface. These wafers are ideal for advanced semiconductor research, MOS structures, contact studies, and high-conductivity substrate applications.

Available Sizes
10 × 10 × 0.5 mm
2 inch diameter × 0.5 mm
3 inch diameter × 0.5 mm
4 inch diameter × 0.5 mm
6 inch diameter × 0.625 mm

Oxide Thickness Options
100 nm
280 nm
300 nm
500 nm

Polishing & Oxide Configuration Options
Single-side Polished + Single-side Oxide
Single-side Polished + Double-side Oxide
Double-side Polished + Single-side Oxide
Double-side Polished + Double-side Oxide

Substrate Specifications
Substrate Type: N-Type (Arsenic-Doped) Silicon
Crystal Orientation: Si (100)
Resistivity: 0.001–0.005 Ω·cm

Thermal Oxide Characteristics
High-quality thermally grown SiO2
Excellent dielectric strength
Low interface trap density
High thickness uniformity
Stable and well-defined Si/SiO2 interface

Applications
MOS capacitor structures
Ohmic contact studies
Gate oxide and interface research
High-conductivity substrate applications
Semiconductor device prototyping
Electrical characterization experiments

Quality & Packaging
Clean-room compatible handling
Carefully packaged to prevent contamination
Research-grade wafer quality

Custom oxide thickness and wafer sizes available upon request.