Thermal SiO2 on N-Type (Phosphorus-Doped) Si (100) Wafers

Thermal SiO2 on N-Type (Phosphorus-Doped) Si (100) Wafers

Overview
Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature thermal oxidation on N-type (phosphorus-doped) Si (100) substrates with a resistivity range of 1–10 Ω·cm.

Thermally grown oxide provides superior film density, excellent thickness uniformity, low interface trap density, and high dielectric strength compared to deposited oxide films. These wafers are widely used in semiconductor device research, MOS structures, interface studies, and microfabrication applications.

Available Sizes
10 × 10 × 0.5 mm
2 inch diameter × 0.5 mm
3 inch diameter × 0.5 mm
4 inch diameter × 0.5 mm
6 inch diameter × 0.625 mm

Oxide Thickness Options
100 nm
280 nm
300 nm
500 nm

Polishing & Oxide Configuration Options
Single-side Polished + Single-side Oxide
Single-side Polished + Double-side Oxide
Double-side Polished + Single-side Oxide
Double-side Polished + Double-side Oxide

Substrate Specifications
Substrate Type: N-Type (Phosphorus-Doped) Silicon
Crystal Orientation: Si (100)
Resistivity: 1–10 Ω·cm

Thermal Oxide Characteristics
High-quality thermally grown SiO2
Excellent dielectric strength
Low defect density
High thickness uniformity
Stable Si/SiO2 interface

Applications
MOS capacitor fabrication
Gate oxide research
Interface state density studies
Semiconductor device prototyping
Electrical characterization experiments
MEMS processing
Thin film deposition platforms

Quality & Packaging
Clean-room compatible handling
Carefully packaged to prevent contamination
Research-grade wafer quality

Custom oxide thickness and wafer sizes available upon request.