Silicon (Si) Sputtering Target, 99.999% Purity, Intrinsic / N-Type / P-Type, Circular

Silicon (Si) Sputtering Target, 99.999% Purity, Intrinsic / N-Type / P-Type, Circular (Price Upon Request)

ZHC LAB’s Silicon (Si) sputtering target is a 99.999% purity, intrinsic / n-type / p-type semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable material identity are important. Pricing for this material is provided upon request because final cost depends on current material market conditions and selected dimensions.

Key Features

Research-Grade Source Material
Supplied as 99.999% Purity, Intrinsic / N-Type / P-Type for thin-film workflows that require controlled source composition and dependable deposition behavior.

Circular Target Formats
Available in circular diameters including 1 inch diameter (25.4 mm), 1.97 inch diameter (50 mm), 2 inch diameter (50.8 mm), 2.36 inch diameter (60 mm), 3 inch diameter (76.2 mm), 3.15 inch diameter (80 mm), 4 inch diameter (101.6 mm), 3.94 inch diameter (100 mm). Thickness and mounting options include 3 mm thick, 4 mm thick, 5 mm thick, 6 mm thick, 6.35 mm thick, 3 mm + 2 mm Cu backing, depending on selected configuration.

Controlled Processing and Inspection
Target preparation may include material selection, forming, heat treatment, precision machining, dimensional inspection, surface finishing, cleaning, and final quality review. Composition and impurity control may be supported by analytical methods such as ICP, GDMS, carbon/sulfur analysis, oxygen/nitrogen analysis, and metallographic inspection where appropriate.

Clean Handling and Packaging
Targets are prepared for deposition use with clean surface handling and protective packaging. Store sealed in a dry environment, handle with clean gloves, and avoid direct contact with oil, dust, moisture, or other surface contamination before installation.

Mounting Configuration Note
Selected configurations for this product include mounting options such as 3 mm + 2 mm Cu backing. Choose the plain target, Cu-backed target, and/or magnetic-shim configuration according to the sputtering source geometry and cathode requirements.

Material Properties and Technical Indicators

The following material-property values are provided as reference technical indicators for material selection, source loading, process planning, and thin-film deposition evaluation:

– Element symbol: Si
– CAS number: 7440-21-3
– Density: 2.3290 g·cm-3
– Physical state: solid
– Melting point: 1414°C
– Boiling point: 3265°C
– Heat of fusion: 50.21 kJ·mol- 1
– Heat of vaporization: 359 kJ·mol- 1
– Specific heat capacity: 19.789J·mol- 1·K-1
– Crystal structure: diamond cubic
– Magnetic order: diamagnetic
– Thermal expansion coefficient: (25 °C)2.6m ·m-1·K-1
– Thermal conductivity: 149 W·m-1·K- 1
– Electrical resistivity: (20 °C)103 n Ω·m
– Young’s modulus: 130-188[6] GPa
– Shear modulus: 51-80[6] GPa
– Bulk modulus: 97.6[6] GPa
– Mohs hardness: 7
– Poisson’s ratio: 0.064 – 0.28[6]
– Band gap: 1.12 eV

Common Applications

– semiconductor thin-film research; Si-based device and sensor development; doped and intrinsic silicon film studies; microfabrication process development
– Academic, industrial, and pilot-scale thin-film process development