Copper (Cu) Sputtering Target, 99.99% (4N) Purity, Circular

Copper (Cu) Sputtering Target, 99.99% (4N) Purity, Circular

ZHC LAB’s Copper (Cu) Sputtering Target is a high-purity circular disc manufactured for magnetron sputtering deposition of copper thin films. The target is produced from 99.99% (4N) purity copper feedstock through controlled large-deformation processing to achieve a fine, uniform grain structure that promotes consistent sputter erosion rates, low particle generation, and repeatable film composition across the target lifetime. Copper thin films deposited from this target exhibit high electrical and thermal conductivity, excellent electromigration resistance, and compatibility with standard semiconductor interconnect and barrier layer processes. Available in 2 inch and 3 inch diameter configurations with multiple thickness options to match research-scale and production-scale magnetron cathode geometries. Each target ships with a Certificate of Analysis (COA) documenting purity and trace element composition verified by GDMS or ICP-OES. Custom sizes, purities (up to 99.9999%), and backing plate bonding services are available upon request.

MATERIAL SPECIFICATIONS:
Material: copper (Cu)
CAS number: 7440-50-8
Purity: 99.99% (4N)
Shape: circular disc
Available sizes: 2 inch dia × 3 mm thick (φ50.8 × 3 mm); 3 inch dia × 3 mm thick (φ76.2 × 3 mm); 3 inch dia × 6 mm thick (φ76.2 × 6 mm)
Appearance: metallic reddish-pink, polished surface
Melting point: 1,085 °C (1,985 °F)
Density: 8.96 g/cm3
Sputtering method: DC magnetron sputtering, RF magnetron sputtering
Maximum power density: consult cathode manufacturer specifications
Quality documentation: Certificate of Analysis (COA) included

COMMON APPLICATIONS: Magnetron sputter deposition of copper thin films for semiconductor interconnect metallization and diffusion barrier seed layers; electrode fabrication in MEMS, sensors, and microelectronic devices; deposition of conductive layers in solar cell and photovoltaic research; copper seed layers for electroplating processes; optical and decorative coatings; research-grade thin film studies in materials science, physics, and electrical engineering laboratories.

USAGE NOTES: Mount target onto the magnetron cathode with the polished face oriented toward the substrate. Ensure uniform thermal contact between the target and the cathode cooling plate; thermal transfer paste or indium bonding may be required depending on cathode design. For DC magnetron sputtering, a typical starting power density is 5–10 W/cm2; increase gradually while monitoring plasma stability and target temperature. Use high-purity argon (99.999%) as the sputtering gas. Recommended base pressure before deposition: ≤5 × 106 Torr. Store in the original sealed packaging in a clean, dry environment to prevent surface oxidation. If oxidation occurs, the target surface can be pre-sputtered to remove the oxide layer before film deposition. Custom dimensions, higher purities (99.999% and 99.9999%), and indium bonding to oxygen-free copper backing plates are available upon request.
Copper (Cu) Sputtering Target, 99.99% (4N) Purity, Circular

ZHC LAB’s Copper (Cu) Sputtering Target is a high-purity circular disc manufactured for magnetron sputtering deposition of copper thin films. The target is produced from 99.99% (4N) purity copper feedstock through controlled large-deformation processing to achieve a fine, uniform grain structure that promotes consistent sputter erosion rates, low particle generation, and repeatable film composition across the target lifetime. Copper thin films deposited from this target exhibit high electrical and thermal conductivity, excellent electromigration resistance, and compatibility with standard semiconductor interconnect and barrier layer processes. Available in 2 inch and 3 inch diameter configurations with multiple thickness options to match research-scale and production-scale magnetron cathode geometries. Each target ships with a Certificate of Analysis (COA) documenting purity and trace element composition verified by GDMS or ICP-OES. Custom sizes, purities (up to 99.9999%), and backing plate bonding services are available upon request.

MATERIAL SPECIFICATIONS:
Material: copper (Cu)
CAS number: 7440-50-8
Purity: 99.99% (4N)
Shape: circular disc
Available sizes: 2 inch dia × 3 mm thick (φ50.8 × 3 mm); 3 inch dia × 3 mm thick (φ76.2 × 3 mm); 3 inch dia × 6 mm thick (φ76.2 × 6 mm)
Appearance: metallic reddish-pink, polished surface
Melting point: 1,085 °C (1,985 °F)
Density: 8.96 g/cm3
Sputtering method: DC magnetron sputtering, RF magnetron sputtering
Maximum power density: consult cathode manufacturer specifications
Quality documentation: Certificate of Analysis (COA) included

COMMON APPLICATIONS: Magnetron sputter deposition of copper thin films for semiconductor interconnect metallization and diffusion barrier seed layers; electrode fabrication in MEMS, sensors, and microelectronic devices; deposition of conductive layers in solar cell and photovoltaic research; copper seed layers for electroplating processes; optical and decorative coatings; research-grade thin film studies in materials science, physics, and electrical engineering laboratories.

USAGE NOTES: Mount target onto the magnetron cathode with the polished face oriented toward the substrate. Ensure uniform thermal contact between the target and the cathode cooling plate; thermal transfer paste or indium bonding may be required depending on cathode design. For DC magnetron sputtering, a typical starting power density is 5–10 W/cm2; increase gradually while monitoring plasma stability and target temperature. Use high-purity argon (99.999%) as the sputtering gas. Recommended base pressure before deposition: ≤5 × 106 Torr. Store in the original sealed packaging in a clean, dry environment to prevent surface oxidation. If oxidation occurs, the target surface can be pre-sputtered to remove the oxide layer before film deposition. Custom dimensions, higher purities (99.999% and 99.9999%), and indium bonding to oxygen-free copper backing plates are available upon request.
Copper (Cu) Sputtering Target, 99.99% (4N) Purity, Circular

ZHC LAB’s Copper (Cu) Sputtering Target is a high-purity circular disc manufactured for magnetron sputtering deposition of copper thin films. The target is produced from 99.99% (4N) purity copper feedstock through controlled large-deformation processing to achieve a fine, uniform grain structure that promotes consistent sputter erosion rates, low particle generation, and repeatable film composition across the target lifetime. Copper thin films deposited from this target exhibit high electrical and thermal conductivity, excellent electromigration resistance, and compatibility with standard semiconductor interconnect and barrier layer processes. Available in 2 inch and 3 inch diameter configurations with multiple thickness options to match research-scale and production-scale magnetron cathode geometries. Each target ships with a Certificate of Analysis (COA) documenting purity and trace element composition verified by GDMS or ICP-OES. Custom sizes, purities (up to 99.9999%), and backing plate bonding services are available upon request.

MATERIAL SPECIFICATIONS:
Material: copper (Cu)
CAS number: 7440-50-8
Purity: 99.99% (4N)
Shape: circular disc
Available sizes: 2 inch dia × 3 mm thick (φ50.8 × 3 mm); 3 inch dia × 3 mm thick (φ76.2 × 3 mm); 3 inch dia × 6 mm thick (φ76.2 × 6 mm)
Appearance: metallic reddish-pink, polished surface
Melting point: 1,085 °C (1,985 °F)
Density: 8.96 g/cm3
Sputtering method: DC magnetron sputtering, RF magnetron sputtering
Maximum power density: consult cathode manufacturer specifications
Quality documentation: Certificate of Analysis (COA) included

COMMON APPLICATIONS: Magnetron sputter deposition of copper thin films for semiconductor interconnect metallization and diffusion barrier seed layers; electrode fabrication in MEMS, sensors, and microelectronic devices; deposition of conductive layers in solar cell and photovoltaic research; copper seed layers for electroplating processes; optical and decorative coatings; research-grade thin film studies in materials science, physics, and electrical engineering laboratories.

USAGE NOTES: Mount target onto the magnetron cathode with the polished face oriented toward the substrate. Ensure uniform thermal contact between the target and the cathode cooling plate; thermal transfer paste or indium bonding may be required depending on cathode design. For DC magnetron sputtering, a typical starting power density is 5–10 W/cm2; increase gradually while monitoring plasma stability and target temperature. Use high-purity argon (99.999%) as the sputtering gas. Recommended base pressure before deposition: ≤5 × 106 Torr. Store in the original sealed packaging in a clean, dry environment to prevent surface oxidation. If oxidation occurs, the target surface can be pre-sputtered to remove the oxide layer before film deposition. Custom dimensions, higher purities (99.999% and 99.9999%), and indium bonding to oxygen-free copper backing plates are available upon request.