Titanium Silicon Tantalum Alloy (TiSiTa) Sputtering Target, 99.9% Purity, Ti:Si:Ta = 1:1:1 at%, Circular (Price Upon Request)

$9,999.99

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Titanium Silicon Tantalum Alloy (TiSiTa) Sputtering Target, 99.9% Purity, Ti:Si:Ta = 1:1:1 at%, Circular (Price Upon Request)

ZHC LAB’s Titanium Silicon Tantalum Alloy (TiSiTa) sputtering target is a 99.9% purity, ti:si:ta = 1:1:1 at% ternary alloy source material PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable material identity are important. Pricing is provided upon request because final cost depends on selected dimensions and current material market conditions.

Key Features

Research-Grade Source Material
Supplied as 99.9% Purity, Ti:Si:Ta = 1:1:1 at% for thin-film workflows that require controlled source composition and dependable deposition behavior.

Circular Target Formats
Available in circular diameters including 3 inch diameter (76.2 mm). Thickness and mounting options include 3 mm + 2 mm Cu backing, depending on selected configuration.

Controlled Processing and Inspection
Target preparation may include material selection, forming, heat treatment, precision machining, dimensional inspection, surface finishing, cleaning, and final quality review. Composition and impurity control may be supported by analytical methods such as ICP, GDMS, carbon/sulfur analysis, oxygen/nitrogen analysis, and metallographic inspection where appropriate.

Clean Handling and Packaging
Targets are prepared for deposition use with clean surface handling and protective packaging. Store sealed in a dry environment, handle with clean gloves, and avoid direct contact with oil, dust, moisture, or other surface contamination before installation.

Technical Specifications

Material: Titanium Silicon Tantalum Alloy (TiSiTa)
Purity / Composition: 99.9% Purity, Ti:Si:Ta = 1:1:1 at%
Form: Circular sputtering target
Available Diameters: 3 inch diameter (76.2 mm)
Available Thickness / Backing Options: 3 mm + 2 mm Cu backing
Compatible Equipment: Single-target sputtering systems, multi-target sputtering systems, ion sputtering systems, and magnetron sputtering equipment
Packaging: Protective target packaging for laboratory shipment and storage

Common Applications

– TiSiTa alloy thin-film deposition; multi-component barrier and contact-layer research; semiconductor metallization studies; Ti-Si-Ta PVD process development
– Academic, industrial, and pilot-scale thin-film process development

option

99.9% (3N)

option1

3 inch diameter (76.2 mm)

option2

3 mm + 2 mm Cu backing