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Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…
Silicon Carbide (SiC) Ceramic Plates / SiC Structural Ceramic Components Product Overview Silicon Carbide (SiC) ceramic plates are high-performance structural ceramics designed for extreme temperature and harsh operating environments. Manufactured using pressureless sintering technology, these SiC ceramics offer outstanding thermal conductivity, excellent oxidation resistance, superior thermal shock resistance, and high mechanical strength. They are widely…
Silicon Carbide (SiC) Evaporation Pellets, 99.9% Purity ZHC LAB Silicon Carbide (SiC) evaporation pellets are high-purity compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity…
Silicon Carbide (SiC) Sputtering Target, 99.9% Purity, Circular (Price Upon Request) ZHC LAB’s Silicon Carbide (SiC) sputtering target is a 99.9% purity carbide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency,…
Silicon Dioxide (SiO2) Evaporation Pellets, 99.99%-99.999% Purity ZHC LAB Silicon Dioxide (SiO2) evaporation pellets are high-purity compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity…
Silicon Dioxide (SiO2) Sputtering Target, 99.99% Purity, Circular ZHC LAB’s Silicon Dioxide (SiO2) sputtering target is a 99.99% purity oxide dielectric ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable…
Silicon Monoxide (SiO) Evaporation Pellets, 99.95% Purity ZHC LAB Silicon Monoxide (SiO) evaporation pellets are high-purity compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity…
Silicon Monoxide (SiO) Sputtering Target, 99.99% Purity, Circular ZHC LAB’s Silicon Monoxide (SiO) sputtering target is a 99.99% purity oxide ceramic evaporation and sputtering source material PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling,…
Silicon Nitride (Si3N4) Evaporation Pellets, 99.99% Purity ZHC LAB Silicon Nitride (Si3N4) evaporation pellets are high-purity compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity…
Silicon Nitride (Si3N4) Sputtering Target, 99.9% Purity, Circular (Price Upon Request) ZHC LAB’s Silicon Nitride (Si3N4) sputtering target is a 99.9% purity nitride ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency,…
Silicon on Sapphire (SOS) Wafer Substrate Specifications (Sapphire / Al2O3): – Material: Al2O3 Single Crystal – Orientation: R-plane (1-102) – Diameter: 100 mm (Custom cutting to 5x5mm, 10x10mm available) – Thickness: 460 μm – Flat: One flat Epitaxial Layer Specifications (Silicon Film): – Material: Single Crystal Silicon – Orientation: (100) – Type/Dopant: Undoped – Thickness:…
Silicon Telluride (Si2Te3) Sputtering Target, 99.99% Purity, Circular (Price Upon Request) ZHC LAB’s Silicon Telluride (Si2Te3) sputtering target is a 99.99% purity telluride chalcogenide source material PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling,…
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