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Showing 769–784 of 1047 results

Silicon (Si) Single Crystal Substrates (N-type, doped), 10 pcs/pack
Price range: $79.00 through $129.00
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm^3 – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

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Silicon (Si) Single Crystal Substrates (P-type, doped), 5 pcs/pack
Price range: $79.00 through $129.00
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm^3 – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon (Si) Single Crystal Substrates (Undoped), 10 pcs/pack
Price range: $79.00 through $129.00
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm^3 – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon (Si) Single Crystal Wafers (N-type, doped)
Price range: $29.00 through $9,999.00
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm^3 – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon (Si) Single Crystal Wafers (P-type, doped)
Price range: $29.00 through $9,999.00
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm^3 – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon (Si) Single Crystal Wafers (Undoped)
Price range: $29.00 through $9,999.00
Silicon (Si) Single Crystal Substrates (Wafers) Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.4301 Angstrom – Hardness: 6.5 (Mohs) – Density: 2.329 g/cm^3 – Melting Point: 1414 °C – Growth Method: CZ and FZ Standard Specifications: 1. Orientation Note – Other orientations customizable 2. Surface Quality – Polish: Single-side polished / Double-side…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon (Si) Sputtering Target, 99.999% Purity, Intrinsic / N-Type / P-Type, Circular
Price range: $114.99 through $589.99
Silicon (Si) Sputtering Target, 99.999% Purity, Intrinsic / N-Type / P-Type, Circular (Price Upon Request) ZHC LAB’s Silicon (Si) sputtering target is a 99.999% purity, intrinsic / n-type / p-type semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch…

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Silicon Carbide (N-type 3C-SiC) Single Crystal Substrates
Price range: $189.00 through $219.00
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

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Silicon Carbide (N-type 3C-SiC) Single Crystal Wafers
$829.00
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

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Silicon Carbide (N-type 4H-SiC) Single Crystal Substrates
Price range: $33.00 through $159.00
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide (N-type 4H-SiC) Single Crystal Wafers
Price range: $149.00 through $1,009.00
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide (N-type 6H-SiC) Single Crystal Substrates
Price range: $159.00 through $189.00
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide (N-type 6H-SiC) Single Crystal Wafers
$479.00
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

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Silicon Carbide (P-type 4H-SiC) Single Crystal Substrates
Price range: $157.00 through $189.00
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

Select options This product has multiple variants. The options may be chosen on the product page
Silicon Carbide (P-type 4H-SiC) Single Crystal Wafers
$699.00
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

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Silicon Carbide (P-type 6H-SiC) Single Crystal Substrates
Price range: $139.00 through $159.00
Silicon Carbide (SiC) Single Crystal Substrates (Wafers) Physical Properties (4H-SiC vs 6H-SiC): – Lattice Parameters: – 4H-SiC: a=3.076 Angstrom, c=10.053 Angstrom – 6H-SiC: a=3.073 Angstrom, c=15.117 Angstrom – Stacking Sequence: 4H (ABCB) / 6H (ABCACB) – Mohs Hardness: ≈ 9.2 – Density: 3.21 g/cm^3 – Thermal Expansion Coefficient: 4-5 x 10^-6/K – Thermal Conductivity (@298K):…

Select options This product has multiple variants. The options may be chosen on the product page