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Showing 33–48 of 209 results
Cobalt-Doped Magnesium Aluminate (Co2+:MgAl2O4) Crystal Key Specifications (Single-Sided Reference): – Chemical Formula: Co2+:MgAl2O4 – Crystal Structure: Cubic – Lattice Constant: 8.07 Angstrom – Density: 3.62 g/cm^3 – Melting Point: 2105°C – Dimensions: Customizable specifications available
Cobalt Oxide (Co3O4) Single Crystal Substrate Physical Properties: – Crystal Structure: Cubic System – Melting Point: 895 °C – Density: 6.07 g/cm^3 – Color: Black – Water Solubility: Insoluble Standard Specifications: – Orientation: (001) miscut < 0.5°, (100) miscut < 0.5° – Edge orientation: Available – Dimensions: 5 × 5 × 0.5mm, 10 × 10…
Cobalt Oxide (CoO) Single Crystal Substrate Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=4.26 Angstrom – Melting Point: 1933 °C – Density: 6.1 g/cm^3 – Color: Black Standard Specifications: – Orientation: (001) miscut < 0.5°, (100) miscut < 0.5° – Edge orientation: Available – Dimensions: 5 × 5 × 0.5mm, 10 ×…
Copper (Cu) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=3.605Angstrom – Density: 8.93 g/cm^3 – Melting Point: 1083 °C – Boiling Point: 2567 °C – Mohs Hardness: 3 (Mohs) – Purity: 99.999% – Growth Method: Czochralski or Bridgman Method Standard Specifications: – Orientation: (100) miscut <= 2.0°, (110) miscut…
Copper-Coated Silicon substrates (Cu/Ti on Si (100)) Overview Our copper-coated silicon substrates are precision-cut from research-grade Cu thin film wafers fabricated on Si (100) substrates using high-vacuum magnetron sputtering. A 10 nm titanium (Ti) adhesion layer is deposited between the silicon substrate and the copper film to ensure strong interfacial bonding and stable electrical performance….
Copper-Coated Silicon Wafers (Cu/Ti on Si (100)) Overview Our copper-coated silicon wafers are fabricated using high-vacuum magnetron sputtering to ensure uniform thickness, strong adhesion, and clean surface morphology suitable for electrochemical research and microfabrication. A titanium (Ti) adhesion layer is deposited between the silicon substrate and the copper film to enhance interfacial bonding and long-term…
Cuprous Oxide (Cu2O) Single Crystal Substrate Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=4.27 Angstrom – Melting Point: 1232 °C – Density: 6.0 g/cm^3 – Mohs Hardness: 3.5~4 (Mohs) – Color: dark red to conchoidal red – Growth Method: Natural Standard Specifications: – Orientation: (001), (110), (111) – Dimensions: 4 × 4…
Diamond Single Crystal Substrate Physical Properties: – Preparation Method: CVD – Nitrogen Content: < 50 ppm – Hardness (Microhardness): 80~150 GPa – Young’s Modulus: 1150~1300 GPa – Friction Coefficient: 0.05~0.05 – Thermal Expansion Coefficient: 1.0 x 10^-6 /K – Thermal Conductivity: 1500~2000 w/(m.K) – Optical Refractive Index: 1064 nm: 2.392 , 600 nm: 2.415 –…
High-quality transparent Indium Tin Oxide (ITO) conductive glass substrates tailored for laboratory applications in electrochemistry, optoelectronics, electrode fabrication, electrodeposition, and solar energy research. Key Specifications: – Substrate Material: Standard Float Glass – Conductive Layer: Indium Tin Oxide (ITO) on both sides – Resistance Options: 7-10 Ω/sq, or 3-5 Ω/sq – Transmittance: ≥ 83% – Thermal…
Dysprosium Scandate (DyScO3) Single Crystal Substrate Physical Properties: – Crystal Structure: Orthorhombic System – Lattice Constant: a=5.44Angstrom , b=5.71Angstrom , c=7.89Angstrom – Density: 6.9 g/cm^3 – Melting Point: 2127 °C – Growth Method: Czochralski (CZ) Standard Specifications: – Orientation: (110) miscut < 0.3°, (001) miscut < 0.3°, (100) miscut < 0.3°, (010) miscut < 0.3°,…
The elastic membrane storage box is designed with two layers of highly elastic transparent membranes. It is suitable for suspending and securing fragile, high-value items such as crystals, prisms, optical components, gemstones, watches, and other delicate products. By holding the item between the elastic membranes, the box effectively prevents movement and mechanical damage during transportation…
V2.0 Electric Vacuum Suction Pen & Pick-and-Place Station Application: Flexible solution for small component assembly and handling of crystals, chips, wafers, optical parts, electronic components, and optoelectronic devices. The system replaces manual tweezers for delicate operations. Key Features: * Continuous & Stable Suction: Built-in powerful, low-noise vacuum pump provides continuous suction without the need for…
roduct Description: Overview: Premium electronic-grade glass substrates with high-aluminosilicate composition, specifically engineered for advanced laboratory research. These substrates offer superior mechanical strength, chemical durability, and high visible light transmittance compared to standard soda-lime glass. Key Specifications: – Material Classification: High-Aluminosilicate Glass – Grade: Electronic-Grade – Dimensional Precision: ±0.05 mm – Standard Thickness (T) Range: 0.4…
Fe doped SrTiO3 Single Crystal Substrate Physical Properties: – Fe Doping Concentration: 0.5% wt, 0.05% wt, 0.01% wt, 0.005% wt – Crystal Structure: Cubic System – Lattice Constant: a=3.905 Angstrom – Melting Point: 2080 °C – Density: 5.175 g/cm^3 – Mohs Hardness: 6 (Mohs) – Growth Method: Verneuil method Standard Specifications: – Orientation: (100) miscut…
[KMg3(AlSi3O10)F2] Fluorophlogopite Mica Disc Physical Properties: – Formula: KMg3(AlSi3O10)F2 – Melting Point: 1375 °C – Long-term Operating Temperature: 1100 °C – Preparation Method: Platinum Crucible Melting Method
[KMg3(AlSi3O10)F2] Fluorophlogopite Mica Substrate Physical Properties: – Formula: KMg3(AlSi3O10)F2 – Melting Point: 1375 °C – Long-term Operating Temperature: 1100 °C – Preparation Method: Platinum Crucible Melting Method
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