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Showing 177–192 of 209 results
SP Series Sample Storage Boxes Application: Suitable for packaging, storage, and display of various optoelectronic components and general products. The robust design allows for safe logistics and transportation. Note: For highly sensitive, fragile, or precision devices that require suspension or immobilization, we recommend using Gel Boxes or Membrane Boxes instead. Detailed Specifications (Inner vs. Outer…
Square Alumina (Al2O3) Ceramic Substrates Overview: High-performance polycrystalline aluminum oxide (Al2O3) ceramic substrates in square and rectangular formats, engineered for demanding electrical insulation, thermal management, and laboratory research applications. Available in sizes from 5 × 5 mm up to 40 × 40 mm with various thickness options. Key Specifications: – Format: Square / Rectangular –…
Square Sapphire (Al2O3) Single Crystal Substrates, C-Plane (0001) Overview: High-purity single-crystal sapphire (Al2O3) substrates in square format, C-plane (0001) orientation. Available from 5 × 5 mm up to 20 × 20 mm, in 0.5 and 1.0 mm thickness, with single-side (SSP) or double-side (DSP) polishing. Square format is convenient for mask alignment, corner-referenced deposition, and…
Standard Format: Square/rectangular substrates — 5 × 5 × 0.5 mm, 10 × 10 × 0.5 mm (other sizes on request). Polish: Single-Side Polished (SSP) or Double-Side Polished (DSP). Product Description: Overview: High-purity Strontium Titanate (SrTiO3) single crystal substrates optimized for high-temperature superconductivity (HTS), magnetron sputtering, and pulsed laser deposition (PLD). These cubic perovskite crystals…
Standard Format: Circular wafer — 1″ diameter (25.4 mm) × 0.5 mm. Polish: Single-Side Polished (SSP) or Double-Side Polished (DSP). Product Description: Overview: High-purity Strontium Titanate (SrTiO3) single crystal wafers optimized for high-temperature superconductivity (HTS), magnetron sputtering, and pulsed laser deposition (PLD). These cubic perovskite crystals provide a stable foundation for the epitaxial growth of…
Standard LiF Optical Window for UV and IR Applications Product Overview: Lithium Fluoride (LiF) is a cubic crystal with excellent optical transmission properties, especially in the vacuum ultraviolet (VUV) region. It has the lowest refractive index of all common infrared materials and is widely used in UV transmission windows, lenses, and prisms. Physical Properties: –…
Strontium Lanthanum Aluminate (SrLaAlO4) Single Crystal Substrate Physical Properties: – Crystal Structure: Tetragonal System – Lattice Constants: a=3.756Angstrom , c=12.636Angstrom – Melting Point: 1650 °C – Density: 5.92 g/cm^3 – Hardness: 6~6.5 (Mohs) – Growth Method: CZ Standard Specifications: 1. Orientation – (001) miscut < 0.3° (customizable < 0.1°) – (100) miscut < 0.3° (customizable…
Strontium Lanthanum Gallate (SrLaGaO4) Single Crystal Substrate Physical Properties: – Crystal Structure: Tetragonal System – Lattice Constants: a=3.843Angstrom , c=12.680Angstrom – Melting Point: 1500 °C – Density: 4.88 g/cm^3 – Growth Method: Czochralski (CZ) Standard Specifications: 1. Orientation – (001) miscut < 0.3° – (100) miscut < 0.3° 2. Edge Orientation – Available 3. Surface…
Tellurium Dioxide (TeO2) Single Crystal Substrate Physical Properties: Crystal Structure: Tetragonal System Lattice Constants: a=b=4.81 Angstrom, c=7.613 Angstrom Density: 5.99 g/cm^3 Melting Point: 733 degC Mohs Hardness: 4 Mohs Growth Method: CZ Standard Specifications: Orientation: (110) miscut < 0.5 deg Edge Orientation: request
Terbium Gallium Garnet (TGG / Tb3Ga5O12) Single Crystal Substrate Physical Properties: Crystal Structure: Cubic System Lattice Constant: a=12.355 Angstrom Density: 7.13 g/cm^3 Mohs Hardness: 8 Mohs Melting Point: 1725 degC Transmittance Range: 400 ~ 1100 nm Verdet Constant: 40 rad/T/m @1064nm Growth Method: CZ Standard Specifications: Orientation: (111) miscut < 0.3 deg Edge Orientation: Available
Terbium Scandate (TbScO3) Single Crystal Substrate Physical Properties: – Crystal Structure: Orthorhombic System – Lattice Constants: a=5.4543 Angstrom, b=5.7233 Angstrom, c=7.9147 Angstrom – Density: 6.6 g/cm^3 – Melting Point: 2127 °C – Growth Method: CZ Standard Specifications: 1. Orientation – (110) miscut < 0.3° – (001) miscut < 0.3° – (100) miscut < 0.3° –…
Thermal SiO2 on N-Type (Arsenic-Doped) Si (100) Wafers Overview Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature thermal oxidation on heavily doped N-type (arsenic-doped) Si (100) substrates with ultra-low resistivity of 0.001–0.005 Ω·cm. The highly doped silicon substrate provides excellent electrical conductivity, while the thermally grown SiO2 layer offers superior film density, high…
Thermal SiO2 on N-Type (Phosphorus-Doped) Si (100) Wafers Overview Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature thermal oxidation on N-type (phosphorus-doped) Si (100) substrates with a resistivity range of 1–10 Ω·cm. Thermally grown oxide provides superior film density, excellent thickness uniformity, low interface trap density, and high dielectric strength compared to deposited…
Thermal SiO2 on P-Type (Boron-Doped) Si (100) Wafers Overview Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature thermal oxidation on P-type (boron-doped) Si (100) substrates. Available resistivity ranges include 1–10 Ω·cm and heavily doped 0.001–0.005 Ω·cm options. Thermally grown SiO2 provides superior film density, excellent dielectric strength, and a stable Si/SiO2 interface compared…
Thermal SiO2 on Undoped Si (100) Wafers Overview Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature dry/wet thermal oxidation on undoped Si (100) substrates. Thermal oxide provides superior film density, excellent uniformity, low defect density, and outstanding electrical insulation compared to deposited oxide films. These wafers are widely used in semiconductor research, MOS…
Tin Dioxide (SnO2) Single Crystal Substrate Physical Properties: – Crystal Structure: Tetragonal – Lattice Constants: a=4.73 Angstrom, c=3.18 Angstrom – Melting Point: 1800-1900 °C – Density: 6.9 g/cm^3 – Hardness: 7 (Mohs) – Color: Dark yellow brownish – Preparation Method: Natural Standard Specifications: 1. Orientation – (001), (100), (110), (111) 2. Defects – Twinning: Natural…
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