Showing 49–64 of 209 results
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$180.00 – $199.00Price range: $180.00 through $199.00
Product Description: Overview: These Fluorine-doped Tin Oxide (FTO) coated glass substrates are designed for high-performance electrochemical and optoelectronic research. They offer superior thermal stability and electrical conductivity compared to standard conductive glass, making them ideal for dye-sensitized solar cells (DSSC) and perovskite research. Key Specifications: – Substrate Material: Standard Float Glass – Conductive Layer: Fluorine-doped…
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$29.00 – $140.00Price range: $29.00 through $140.00
Product Description: Overview: These Fluorine-doped Tin Oxide (FTO) coated glass substrates are designed for high-performance electrochemical and optoelectronic research. They offer superior thermal stability and electrical conductivity compared to standard conductive glass, making them ideal for dye-sensitized solar cells (DSSC) and perovskite research. Key Specifications: – Substrate Material: Standard Float Glass – Conductive Layer: Fluorine-doped…
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$102.00 – $139.00Price range: $102.00 through $139.00
Product Description: Overview: High-purity Fused Quartz Substrates substrates designed for high-temperature and high-precision laboratory research. These substrates offer exceptional thermal stability and chemical resistance, making them ideal for specialized optical, electrochemical, and material science applications. Key Specifications: – Precision: ±0.05 mm – Processing Services: CNC/Laser cutting, hole drilling, edge grinding, beveling, slotting, scribing, and specialized…
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$299.00 – $3,699.00Price range: $299.00 through $3,699.00
Ga2O3 Single Crystal Substrate Key Specifications (Single-Sided Reference): – Thickness: 0.5–0.8 mm – Material: Gallium Oxide (Ga2O3) Single Crystal – FWHM (arcsec): ≤ 150 arcsec – Surface Type: Single-Sided Polished (SSP), Double-Sided Polished (DSP), Lapping – Crystal Orientations: <100>, <001>, <-201>, <010> – Doping Types & Concentrations: 1. UID (Unintentionally Doped): ≤ 5E17 cm^-3 2….
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$95.00 – $309.00Price range: $95.00 through $309.00
Gadolinium Gallium Garnet (Gd3Ga5O12, GGG) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.376Angstrom – 2 theta: 51°07′ – Density: 7.09 g/cm^3 – Melting Point: 1750°C – Mohs Hardness: 6.5 (Mohs) – Growth Method: CZ Standard Specifications: – Orientation: (111) miscut < 0.3° (Available <0.1°) (110) miscut < 0.3° (Available…
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$989.00 – $1,099.00Price range: $989.00 through $1,099.00
Gadolinium Gallium Garnet (Gd3Ga5O12, GGG) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.376Angstrom – 2 theta: 51°07′ – Density: 7.09 g/cm^3 – Melting Point: 1750°C – Mohs Hardness: 6.5 (Mohs) – Growth Method: CZ Standard Specifications: – Orientation: (111) miscut < 0.3° (Available <0.1°) (110) miscut < 0.3° (Available…
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$250.00 – $299.00Price range: $250.00 through $299.00
Gadolinium Scandate (GdScO3) Single Crystal Substrate Physical Properties: – Crystal Structure: Orthorhombic System – Lattice Constant: a=5.45Angstrom , b=5.75Angstrom , c=7.93Angstrom – Melting Point: 2127°C – Density: 6.6 g/cm^3 – Growth Method: CZ Standard Specifications: – Orientation: (110) miscut < 0.3° (Available < 0.1°) (001) miscut < 0.3° (Available < 0.1°) (100) miscut < 0.3°…
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$259.00 – $379.00Price range: $259.00 through $379.00
Gadolinium Scandium Gallium Garnet GSGG (Gd3Sc2Ga5O12) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.554 Angstrom – 2 theta: 50°22′ – Density: 7.09 g/cm^3 – Melting Point: 1750°C – Mohs Hardness: 7.5 (Mohs) – Refractive Index: 1.95 – Dielectric Constant: 30 – Growth Method: CZ Standard Specifications: – Orientation: (100)…
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$999.00 – $1,099.00Price range: $999.00 through $1,099.00
Gadolinium Scandium Gallium Garnet GSGG (Gd3Sc2Ga5O12) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.554 Angstrom – 2 theta: 50°22′ – Density: 7.09 g/cm^3 – Melting Point: 1750°C – Mohs Hardness: 7.5 (Mohs) – Refractive Index: 1.95 – Dielectric Constant: 30 – Growth Method: CZ Standard Specifications: – Orientation: (100)…
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$129.00 – $269.00Price range: $129.00 through $269.00
Gallium Arsenide (GaAs) Single Crystal Substrate – N-type / P-type / Semi-Insulating Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.6534 Angstrom – Melting Point: 1237 °C Standard Specifications (by Type): Type 1: N-type / Si-doped – Growth Method: VGF – Orientation: (100) off (111) 15°±0.5° – Primary Flat: (0-1-1) ± 0.5° /…
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$279.00 – $619.00Price range: $279.00 through $619.00
Gallium Arsenide (GaAs) Single Crystal Substrate – N-type / P-type / Semi-Insulating Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.6534 Angstrom – Melting Point: 1237 °C Standard Specifications (by Type): Type 1: N-type / Si-doped – Growth Method: VGF – Orientation: (100) off (111) 15°±0.5° – Primary Flat: (0-1-1) ± 0.5° /…
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$459.00 – $699.00Price range: $459.00 through $699.00
Gallium Nitride (GaN) Single Crystal Substrate Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
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$979.00 – $999.00Price range: $979.00 through $999.00
Gallium Nitride (GaN) Single Crystal Substrate Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
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$62.00 – $131.00Price range: $62.00 through $131.00
GaN film on Sapphire Substrates Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al2O3 Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al2O3 Substrate Thickness: 430 ± 25 um – Al2O3 Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al2O3 Substrate Roughness:…
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$495.00 – $505.00Price range: $495.00 through $505.00
GaN film on Sapphire wafers Standard Specifications: – GaN film Orientation: C-plane (0001) off angle toward A-axis 0.2° ± 0.1° – Al2O3 Substrate Orientation: C-plane (0001) off angle toward M-axis 0.2° ± 0.1° – Al2O3 Substrate Thickness: 430 ± 25 um – Al2O3 Substrate Surface Finish: Single-Side Polished / Double-Side Polished – Al2O3 Substrate Roughness:…
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$99.00 – $139.00Price range: $99.00 through $139.00
Germanium (Ge) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: 5.6754 Angstrom – Melting Point: 937.4 °C – Density: 5.323 g/cm^3 – Growth Method: CZ Standard Specifications (by Product): Product 1: – Type/Doping: N-type/Sb-doped – Orientation: (111) ± 0.5° – Resistivity: 5~40 ohm-cm – Surface Finish: Single-Side Polished – Dislocation…
