Showing 337–352 of 1047 results
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$9,999.99
Gadolinium Oxide (Gd2O3) Sputtering Target, 99.99% Purity, Circular (Price Upon Request) ZHC LAB’s Gadolinium Oxide (Gd2O3) sputtering target is a 99.99% purity rare-earth oxide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional…
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$250.00 – $299.00Price range: $250.00 through $299.00
Gadolinium Scandate (GdScO3) Single Crystal Substrate Physical Properties: – Crystal Structure: Orthorhombic System – Lattice Constant: a=5.45Angstrom , b=5.75Angstrom , c=7.93Angstrom – Melting Point: 2127°C – Density: 6.6 g/cm^3 – Growth Method: CZ Standard Specifications: – Orientation: (110) miscut < 0.3° (Available < 0.1°) (001) miscut < 0.3° (Available < 0.1°) (100) miscut < 0.3°…
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$259.00 – $379.00Price range: $259.00 through $379.00
Gadolinium Scandium Gallium Garnet GSGG (Gd3Sc2Ga5O12) Single Crystal Substrates Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.554 Angstrom – 2 theta: 50°22′ – Density: 7.09 g/cm^3 – Melting Point: 1750°C – Mohs Hardness: 7.5 (Mohs) – Refractive Index: 1.95 – Dielectric Constant: 30 – Growth Method: CZ Standard Specifications: – Orientation: (100)…
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$999.00 – $1,099.00Price range: $999.00 through $1,099.00
Gadolinium Scandium Gallium Garnet GSGG (Gd3Sc2Ga5O12) Single Crystal Wafers Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=12.554 Angstrom – 2 theta: 50°22′ – Density: 7.09 g/cm^3 – Melting Point: 1750°C – Mohs Hardness: 7.5 (Mohs) – Refractive Index: 1.95 – Dielectric Constant: 30 – Growth Method: CZ Standard Specifications: – Orientation: (100)…
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$9,999.99
Gallium Antimonide (GaSb) Sputtering Target, 99.99% Purity, Circular (Price Upon Request) ZHC LAB’s Gallium Antimonide (GaSb) sputtering target is a 99.99% purity III-V compound semiconductor source material PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean…
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$129.00 – $269.00Price range: $129.00 through $269.00
Gallium Arsenide (GaAs) Single Crystal Substrate – N-type / P-type / Semi-Insulating Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.6534 Angstrom – Melting Point: 1237 °C Standard Specifications (by Type): Type 1: N-type / Si-doped – Growth Method: VGF – Orientation: (100) off (111) 15°±0.5° – Primary Flat: (0-1-1) ± 0.5° /…
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$279.00 – $619.00Price range: $279.00 through $619.00
Gallium Arsenide (GaAs) Single Crystal Substrate – N-type / P-type / Semi-Insulating Physical Properties: – Crystal Structure: Cubic System – Lattice Constant: a=5.6534 Angstrom – Melting Point: 1237 °C Standard Specifications (by Type): Type 1: N-type / Si-doped – Growth Method: VGF – Orientation: (100) off (111) 15°±0.5° – Primary Flat: (0-1-1) ± 0.5° /…
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$870.99 – $5,499.99Price range: $870.99 through $5,499.99
Gallium Nitride (GaN) Evaporation Pellets, 99.99% Purity ZHC LAB Gallium Nitride (GaN) evaporation pellets are high-purity compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity…
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$459.00 – $699.00Price range: $459.00 through $699.00
Gallium Nitride (GaN) Single Crystal Substrate Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
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$979.00 – $999.00Price range: $979.00 through $999.00
Gallium Nitride (GaN) Single Crystal Substrate Physical Properties: – Crystal Structure: Hexagonal System – Lattice Constant: a=3.186Angstrom, c=5.186Angstrom – Preparation Method: HVPE Standard Specifications: – Orientation: C-plane (0001) off angle toward M-axis 0.35° ± 0.15° – Primary Flat: (10-10) ± 2.0° / 16 ± 1 mm – Secondary Flat: (11-20) ± 3.0° / 8 ±…
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$1,750.99 – $2,000.99Price range: $1,750.99 through $2,000.99
Gallium Nitride (GaN) Sputtering Target, 99.99% (4N) Purity, Circular ZHC LAB’s Gallium Nitride (GaN) sputtering target is a high-purity compound semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable material…
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$158.99 – $1,184.99Price range: $158.99 through $1,184.99
Gallium Oxide (Ga2O3) Evaporation Pellets, 99.99% Purity ZHC LAB Gallium Oxide (Ga2O3) evaporation pellets are high-purity compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and controlled material identity…
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$406.99 – $999.99Price range: $406.99 through $999.99
Gallium Oxide (Ga2O3) Sputtering Target, 99.99% Purity, Circular ZHC LAB’s Gallium Oxide (Ga2O3) sputtering target is a 99.99% purity wide-bandgap oxide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable…
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$9,999.99
Gallium Sulfide (GaS) Sputtering Target, 99.9% Purity, Circular (Price Upon Request) ZHC LAB’s Gallium Sulfide (GaS) sputtering target is a 99.9% purity chalcogenide semiconductor ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional…
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$727.99 – $1,049.99Price range: $727.99 through $1,049.99
Gallium Telluride (Ga2Te3) Sputtering Target, 99.99% Purity, Circular ZHC LAB’s Gallium Telluride (Ga2Te3) sputtering target is a 99.99% purity compound semiconductor PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable material…
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$356.99 – $899.99Price range: $356.99 through $899.99
Gallium-Doped Zinc Oxide (GZO) Sputtering Target, Custom ZnO:Ga2O3 Composition, Circular ZHC LAB’s Gallium-Doped Zinc Oxide (GZO) sputtering target is a custom zno:ga2o3 composition transparent conductive oxide ceramic source material PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work…
