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Showing 881–896 of 1047 results
Terbium Scandate (TbScO3) Single Crystal Substrate Physical Properties: – Crystal Structure: Orthorhombic System – Lattice Constants: a=5.4543 Angstrom, b=5.7233 Angstrom, c=7.9147 Angstrom – Density: 6.6 g/cm^3 – Melting Point: 2127 °C – Growth Method: CZ Standard Specifications: 1. Orientation – (110) miscut < 0.3° – (001) miscut < 0.3° – (100) miscut < 0.3° –…
44140 Pouch Dry Cell, 8Ah Ternary Anode-Free Packaging Options: – Specification: 44140/8Ah – Quantity: 5 Pieces/Pack Product Description: Overview: A high-capacity 44140 pouch-type dry cell utilizing an NCM cathode and an anode-free (Copper current collector) configuration. This cell is provided in a non-electrolyte-injected state with stable material performance, allowing for direct electrolyte performance testing. Cell…
Product Description: Overview: A high-energy density 44140 pouch-type dry cell utilizing an NCM811 cathode and lithium metal anode. This cell is provided in a non-electrolyte-injected state, allowing for direct electrolyte performance testing. Cell Core Parameters: – Active Material Content: 96.00% – Double-Sided Areal Density: 48 mg/cm^2 – Layer Configuration (Pos/Neg): 5 / 6 layers –…
Thermal SiO2 on N-Type (Arsenic-Doped) Si (100) Wafers Overview Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature thermal oxidation on heavily doped N-type (arsenic-doped) Si (100) substrates with ultra-low resistivity of 0.001–0.005 Ω·cm. The highly doped silicon substrate provides excellent electrical conductivity, while the thermally grown SiO2 layer offers superior film density, high…
Thermal SiO2 on N-Type (Phosphorus-Doped) Si (100) Wafers Overview Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature thermal oxidation on N-type (phosphorus-doped) Si (100) substrates with a resistivity range of 1–10 Ω·cm. Thermally grown oxide provides superior film density, excellent thickness uniformity, low interface trap density, and high dielectric strength compared to deposited…
Thermal SiO2 on P-Type (Boron-Doped) Si (100) Wafers Overview Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature thermal oxidation on P-type (boron-doped) Si (100) substrates. Available resistivity ranges include 1–10 Ω·cm and heavily doped 0.001–0.005 Ω·cm options. Thermally grown SiO2 provides superior film density, excellent dielectric strength, and a stable Si/SiO2 interface compared…
Thermal SiO2 on Undoped Si (100) Wafers Overview Our thermal silicon dioxide (SiO2) wafers are fabricated using high-temperature dry/wet thermal oxidation on undoped Si (100) substrates. Thermal oxide provides superior film density, excellent uniformity, low defect density, and outstanding electrical insulation compared to deposited oxide films. These wafers are widely used in semiconductor research, MOS…
Thermosensitive High-Surface-Area Double-Sided Carbon-Coated Aluminum Foil for Dry-Process Electrodes This material is designed as a current collector for dry-process electrodes. It consists of an aluminum foil substrate coated on both sides with a thermosensitive, high-surface-area carbon layer. The coating provides improved conductivity, optimized interfacial contact, and enhanced electrode stability under dry-process fabrication conditions. Specifications Substrate…
Thermosensitive High-Surface-Area Double-Sided Carbon-Coated Copper Foil for Dry-Process Electrodes This material is a copper-foil current collector engineered for dry-process electrode fabrication. The foil features a thermosensitive, high-surface-area carbon coating applied to both sides, providing improved interfacial contact and enhanced coating adhesion suitable for dry electrode processing. Customized widths and single-/double-sided coating configurations are available upon…
Thulium Iron Garnet (Tm3Fe5O12) Sputtering Target, Stoichiometric Composition, Circular (Price Upon Request) ZHC LAB’s Thulium Iron Garnet (Tm3Fe5O12) sputtering target is a stoichiometric composition rare-earth iron garnet ceramic source material PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process…
Thulium Oxide (Tm2O3) Evaporation Pellets, 99.95% Purity (Request Current Price) ZHC LAB Thulium Oxide (Tm2O3) evaporation pellets are high-purity compound source materials supplied for evaporation coating, thin-film deposition research, optical and functional films, and laboratory PVD process development. The pellet format is convenient for weighing, source loading, and small-batch experimental workflows where clean handling and…
Thulium Oxide (Tm2O3) Sputtering Target, 99.99% Purity, Circular (Price Upon Request) ZHC LAB’s Thulium Oxide (Tm2O3) sputtering target is a 99.99% purity rare-earth oxide ceramic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional…
Tin (Sn) Pellets And Pieces, 99.99%-99.9999% Purity (Request Current Price) ZHC LAB Tin (Sn) pellets and pieces are high-purity source materials supplied for thin-film deposition research, evaporation source loading, alloy preparation, and laboratory materials development. The pellet and piece formats are convenient for weighing, loading, and small-batch experimental workflows where material identity, purity selection, and…
Tin (Sn) Sputtering Target, 99.999% (5N) Purity, Circular (Price Upon Request) ZHC LAB’s Tin (Sn) sputtering target is a high-purity high-purity metallic PVD source material for magnetron sputtering, ion sputtering, and laboratory thin-film deposition. It is supplied in circular target formats for research, development, and small-batch process work where clean handling, dimensional consistency, and reliable…
Tin (Sn) Wire, 99.99% Purity (Request Current Price) ZHC LAB Tin (Sn) wire is a high-purity thin-film and materials-research source format supplied for PVD source loading, evaporation-related workflows, filament or wire studies, alloy preparation, and laboratory materials development. The wire and rod formats support precise cutting, weighing, fixture loading, and small-batch experimental work where material…
Tin Dioxide (SnO2) Single Crystal Substrate Physical Properties: – Crystal Structure: Tetragonal – Lattice Constants: a=4.73 Angstrom, c=3.18 Angstrom – Melting Point: 1800-1900 °C – Density: 6.9 g/cm^3 – Hardness: 7 (Mohs) – Color: Dark yellow brownish – Preparation Method: Natural Standard Specifications: 1. Orientation – (001), (100), (110), (111) 2. Defects – Twinning: Natural…
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